First principles study of Schottky barriers at Ga2O3(100)/metal interfaces

	First principles study of Schottky barriers at Ga2O3(100)/metal interfaces
	Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu ; Xian Zhao
刊名	RSC ADVANCES
	2020
卷号	10 期号:25 页码:14746-14752
公开日期	2020
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30394]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu ; Xian Zhao. First principles study of Schottky barriers at Ga2O3(100)/metal interfaces[J]. RSC ADVANCES,2020,10(25):14746-14752.
APA	Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu ; Xian Zhao.(2020).First principles study of Schottky barriers at Ga2O3(100)/metal interfaces.RSC ADVANCES,10(25),14746-14752.
MLA	Ran Xu; Na Lin; Zhitai Jia; Yueyang Liu; Haoyuan Wang; Yifei Yu ; Xian Zhao."First principles study of Schottky barriers at Ga2O3(100)/metal interfaces".RSC ADVANCES 10.25(2020):14746-14752.