Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: alpha-MnSe dagger

doi:10.1039/d1nr00822f

	Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: alpha-MnSe dagger
	Li, Ningning 2,4; Zhu, Leilei 3; Shang, Honghui 3; Wang, Feng 4; Zhang, Yu 4; Yao, Yuyu 2,4; Wang, Junjun 4; Zhan, Xueying 4; Wang, Fengmei 4; He, Jun 1,2,4
刊名	NANOSCALE
	2021-04-07
页码	12
ISSN号	2040-3364
DOI	10.1039/d1nr00822f
英文摘要	Two-dimensional (2D) non-van der Waals magnetic materials have attracted considerable attention due to their high-temperature ferromagnetism, active surface/interface properties originating from dangling bonds, and good stability under ambient conditions. Here, we demonstrate the controlled synthesis and systematic Raman investigation of ultrathin non-van der Waals antiferromagnetic alpha-MnSe single crystals. Square and triangular nanosheets with different growth orientations can be achieved by introducing different precursors via the atmospheric chemical vapor deposition (APCVD) method. The temperature-dependent resonant enhancement in the Raman intensity of two peaks at 233.8 cm(-1) and 459.9 cm(-1) gives obvious evidence that the antiferromagnetic spin-ordering is below T-N similar to 160 K. Besides, a new peak located at 254.2 cm(-1), gradually appearing as the temperature decreased from 180 K to 100 K, may also be a signature of phase transition from paramagnetic to antiferromagnetic. The phonon dispersion spectra of alpha-MnSe simulated by density functional perturbation theory (DFPT) match well with the observed Raman signals. Moreover, a fabricated alpha-MnSe phototransistor exhibits p-type conducting behavior and high photodetection performance. We believe that these findings will be beneficial for the applications of 2D alpha-MnSe in magnetic and semiconducting fields.
资助项目	National Key R&D Program of China[2018YFA0703700] ; National Key R&D Program of China[2016YFA0200700] ; National Natural Science Foundation of China[91964203] ; National Natural Science Foundation of China[61625401] ; National Natural Science Foundation of China[61851403] ; National Natural Science Foundation of China[61974036] ; National Natural Science Foundation of China[61804035] ; National Natural Science Foundation of China[21805057] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB30000000] ; CAS Key Laboratory of Nanosystem and Hierarchical Fabrication ; Youth Innovation Promotion Association CAS
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
语种	英语
出版者	ROYAL SOC CHEMISTRY
WOS记录号	WOS:000637384300001
内容类型	期刊论文
源URL	[http://119.78.100.204/handle/2XEOYT63/16696]
专题	中国科学院计算技术研究所
通讯作者	Wang, Zhenxing
作者单位	1.Wuhan Univ, Sch Phys & Technol, Minist Educ, Key Lab Artificial Micro & Nanostruct, Wuhan 430072, Peoples R China 2.Univ Chinese Acad Sci, Sino Danish Ctr Educ & Res, Sino Danish Coll, Beijing 100049, Peoples R China 3.Chinese Acad Sci, Inst Comp Technol, Beijing 100049, Peoples R China 4.Natl Ctr Nanosci & Technol, CAS Key Lab Nanosyst & Hierarch Fabricat, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Li, Ningning,Zhu, Leilei,Shang, Honghui,et al. Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: alpha-MnSe dagger[J]. NANOSCALE,2021:12.
APA	Li, Ningning.,Zhu, Leilei.,Shang, Honghui.,Wang, Feng.,Zhang, Yu.,...&Wang, Zhenxing.(2021).Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: alpha-MnSe dagger.NANOSCALE,12.
MLA	Li, Ningning,et al."Controlled synthesis and Raman study of a 2D antiferromagnetic P-type semiconductor: alpha-MnSe dagger".NANOSCALE (2021):12.