Graphene-GaN Schottky diodes

	Graphene-GaN Schottky diodes
	Kim Seongjun 2; Seo Tae Hoon 1; Kim Myung Jong 1; Song Keun Man 3; Suh EunKyung 2; Kim Hyunsoo 2
刊名	NANO RESEARCH
	2015
卷号	8 期号:4 页码:1327-1338
关键词	LIGHT-EMITTING-DIODES N-TYPE GAN THERMIONIC-FIELD-EMISSION SENSITIZED SOLAR-CELLS CONTACT RESISTANCE BARRIER HEIGHT ELECTRICAL CHARACTERISTICS TRANSPARENT ELECTRODES RAMAN-SPECTROSCOPY METAL CONTACTS graphene GaN Schottky diode Schottky barrier height Fermi level pinning
ISSN号	1998-0124
其他题名	Graphene-GaN Schottky diodes
英文摘要	The electrical characteristics of graphene Schottky contacts formed on undoped GaN semiconductors were investigated. Excellent rectifying behavior with a rectification ratio of similar to 10(7) at +/- 2 V and a low reverse leakage current of 1.0 x 10(-8) A/cm(2) at -5 V were observed. The Schottky barrier heights, as determined by the thermionic emission model, Richardson plots, and barrier inhomogeneity model, were 0.90, 0.72, and 1.24 +/- 0.13 eV, respectively. Despite the predicted low barrier height of similar to 0.4 eV at the graphene-GaN interface, the formation of excellent rectifying characteristics with much larger barrier heights is attributed to the presence of a large number of surface states (1.2 x 10(13) states/cm(2)/eV) and the internal spontaneous polarization field of GaN, resulted in a significant upward surface band bending or a bare surface barrier height as high as of 2.9 eV. Using the S parameter of 0.48 (measured from the work function dependence of Schottky barrier height) and the mean barrier height of 1.24 eV, the work function of graphene in the Au/graphene/GaN stack could be approximately estimated to be as low as 3.5 eV. The obtained results indicate that graphene is a promising candidate for use as a Schottky rectifier in GaN semiconductors with n-type conductivity.
资助项目	[Priority Research Center Program through the National Research Foundation of Korea - Ministry of Education, Science and Technology of the Korean government] ; [Ministry of Education] ; [National Research Foundation of Korea (NRF)]
语种	英语
CSCD记录号	CSCD:5454097
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/138907]
专题	中国科学院近代物理研究所
作者单位	1.中国科学院近代物理研究所 2.陕西省地震局 3.Korea Adv Nano Fab Ctr, Suwon 443700, South Korea
推荐引用方式 GB/T 7714	Kim Seongjun,Seo Tae Hoon,Kim Myung Jong,et al. Graphene-GaN Schottky diodes[J]. NANO RESEARCH,2015,8(4):1327-1338.
APA	Kim Seongjun,Seo Tae Hoon,Kim Myung Jong,Song Keun Man,Suh EunKyung,&Kim Hyunsoo.(2015).Graphene-GaN Schottky diodes.NANO RESEARCH,8(4),1327-1338.
MLA	Kim Seongjun,et al."Graphene-GaN Schottky diodes".NANO RESEARCH 8.4(2015):1327-1338.