Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices

doi:10.1016/j.mee.2021.111600

	Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices
	Su, Chaohui 1; Shan, Linbo 1; Yang, Dongliang 1; Zhao, Yanfei 1; Fu, Yujun 1; Liu, Jiande 1,2; Zhang, Guangan 3; Wang, Qi 1; He, Deyan 1
刊名	MICROELECTRONIC ENGINEERING
	2021-07-15
卷号	247 页码:4
关键词	ALH-Al2O3 film CBRAM Heavy ion irradiation Resistive switching
ISSN号	0167-9317
DOI	10.1016/j.mee.2021.111600
通讯作者	Wang, Qi(wangqi77@lzu.edu.cn)
英文摘要	In this work, the effects of heavy ion irradiation on atomic switches with Cu/Al2O3/Pt structure are investigated. The initial device is prone to hard breakdown after forming, while the device after irradiation exhibits good performance such as stable operating voltage, non-volatile switching (a retention characteristic of 10(5) s at room temperature) and good endurance (2000 switching cycles). Compared with the device after low-dose irradiation, the device under higher-dose irradiation shows more uniform off-state resistances but no relevant changes were observed on distributions of on-state resistances, set and reset voltages.
资助项目	National Natural Science Foundation of China[61874051] ; National Natural Science Foundation of China[U1732136] ; Key Program of Natural Science Foundation of Gansu Province[20JR5RA296]
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Optics ; Physics
语种	英语
出版者	ELSEVIER
WOS记录号	WOS:000683574400007
资助机构	National Natural Science Foundation of China ; Key Program of Natural Science Foundation of Gansu Province
内容类型	期刊论文
源URL	[http://119.78.100.186/handle/113462/136644]
专题	中国科学院近代物理研究所
通讯作者	Wang, Qi
作者单位	1.Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China 2.Chinese Acad Sci, Inst Modern Phys, Lanzhou 730000, Peoples R China 3.Chinese Acad Sci, Lanzhou Inst Chem Phys, Key Lab Solid Lubricat, Lanzhou 730000, Peoples R China
推荐引用方式 GB/T 7714	Su, Chaohui,Shan, Linbo,Yang, Dongliang,et al. Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices[J]. MICROELECTRONIC ENGINEERING,2021,247:4.
APA	Su, Chaohui.,Shan, Linbo.,Yang, Dongliang.,Zhao, Yanfei.,Fu, Yujun.,...&He, Deyan.(2021).Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices.MICROELECTRONIC ENGINEERING,247,4.
MLA	Su, Chaohui,et al."Effects of heavy ion irradiation on Cu/Al2O3/Pt CBRAM devices".MICROELECTRONIC ENGINEERING 247(2021):4.