Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping

doi:10.1021/acsnano.1c05650

	Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping
	Zhang, Qingtang 3; Ti, Zhuoyang 2; Zhu, Yuelei 1; Zhang, Yongsheng 2; Cao, Yang 3; Li, Shuang 3; Wang, Meiyu 1; Li, Di 2; Zou, Bo 3; Hou, Yunxiang 3
刊名	ACS NANO
	2021-12-28
卷号	15
关键词	resonant levels nanocrystals thermoelectric materials carrier concentration lattice thermal conductivity
ISSN号	1936-0851
DOI	10.1021/acsnano.1c05650
通讯作者	Wang, Peng(wangpeng@nju.edu.cn) ; Tang, Guodong(tangguodong@njust.edu.cn)
英文摘要	The binary compound of GeTe emerging as a potential medium-temperature thermoelectric material has drawn a great deal of attention. Here, we achieve ultralow lattice thermal conductivity and high thermoelectric performance in In and a heavy content of Cu codoped GeTe thermoelectrics. In dopants improve the density of state near the surface of Femi of GeTe by introducing resonant levels, producing a sharp increase of the Seebeck coefficient. In and Cu codoping not only optimizes carrier concentration but also substantially increases carrier mobility to a high value of 87 cm(2) V-1 s(-1 )due to the diminution of Ge vacancies. The enhanced Seebeck coefficient coupled with dramatically enhanced carrier mobility results in significant enhancement of PF in Ge1.04-x-yInxCuyTe series. Moreover, we introduce Cu2Te nanocrystals' secondary phase into GeTe by alloying a heavy content of Cu. Cu2Te nanocrystals and a high density of dislocations cause strong phonon scattering, significantly diminishing lattice thermal conductivity. The lattice thermal conductivity reduced as low as 0.31 W m(-1) K-1 at 823 K, which is not only lower than the amorphous limit of GeTe but also competitive with those of thermoelectric materials with strong lattice anharmonicity or complex crystal structures. Consequently, a high ZT of 2.0 was achieved for Ge0.9In0.015Cu0.125Te by decoupling electron and phonon transport of GeTe. This work highlights the importance of phonon engineering in advancing high-performance GeTe thermoelectrics.
资助项目	National Natural Science Foundation of China[52071182] ; Qinglan Project of the Young and Middle-aged Academic Leader of Jiangsu Province ; Fundamental Research Funds for the Central Universities[30921011107]
WOS关键词	BAND CONVERGENCE ; POLYCRYSTALLINE SNSE ; FIGURE ; MERIT ; PBTE ; EFFICIENCY ; LEADS ; SNTE
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000751890100052
资助机构	National Natural Science Foundation of China ; Qinglan Project of the Young and Middle-aged Academic Leader of Jiangsu Province ; Fundamental Research Funds for the Central Universities
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn:8080/handle/334002/127554]
专题	中国科学院合肥物质科学研究院
通讯作者	Wang, Peng; Tang, Guodong
作者单位	1.Nanjing Univ, Innovat Ctr Adv Microstruct, Coll Engn & Appl Sci & Collaborat, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 3.Nanjing Univ Sci & Technol, Sch Mat Sci & Engn, MIIT Key Lab Adv Metall & Intermetall Mat Technol, Nanjing 210094, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Qingtang,Ti, Zhuoyang,Zhu, Yuelei,et al. Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping[J]. ACS NANO,2021,15.
APA	Zhang, Qingtang.,Ti, Zhuoyang.,Zhu, Yuelei.,Zhang, Yongsheng.,Cao, Yang.,...&Tang, Guodong.(2021).Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping.ACS NANO,15.
MLA	Zhang, Qingtang,et al."Achieving Ultralow Lattice Thermal Conductivity and High Thermoelectric Performance in GeTe Alloys via Introducing Cu2Te Nanocrystals and Resonant Level Doping".ACS NANO 15(2021).