In-plane magnetic field induced helicity dependent photogalvanic effect on the surface states of topological insulators (BixSb1-x)(2)Te-3

	In-plane magnetic field induced helicity dependent photogalvanic effect on the surface states of topological insulators (BixSb1-x)(2)Te-3
	Chen, Shenzhong; Yu, Jinling; Zhu, Kejing; Zeng, Xiaolin; Chen, Yonghai; Liu, Yu; Zhang, Yang; Cheng, Shuying; He, Ke
刊名	JOURNAL OF APPLIED PHYSICS
	2021
卷号	130 期号:8 页码:85305
公开日期	2021
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/30851]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Chen, Shenzhong; Yu, Jinling; Zhu, Kejing; Zeng, Xiaolin; Chen, Yonghai; Liu, Yu; Zhang, Yang; Cheng, Shuying; He, Ke. In-plane magnetic field induced helicity dependent photogalvanic effect on the surface states of topological insulators (BixSb1-x)(2)Te-3[J]. JOURNAL OF APPLIED PHYSICS,2021,130(8):85305.
APA	Chen, Shenzhong; Yu, Jinling; Zhu, Kejing; Zeng, Xiaolin; Chen, Yonghai; Liu, Yu; Zhang, Yang; Cheng, Shuying; He, Ke.(2021).In-plane magnetic field induced helicity dependent photogalvanic effect on the surface states of topological insulators (BixSb1-x)(2)Te-3.JOURNAL OF APPLIED PHYSICS,130(8),85305.
MLA	Chen, Shenzhong; Yu, Jinling; Zhu, Kejing; Zeng, Xiaolin; Chen, Yonghai; Liu, Yu; Zhang, Yang; Cheng, Shuying; He, Ke."In-plane magnetic field induced helicity dependent photogalvanic effect on the surface states of topological insulators (BixSb1-x)(2)Te-3".JOURNAL OF APPLIED PHYSICS 130.8(2021):85305.