Effect of Air Atmosphere Sensitization on Formation of PbSe p-n Junctions for High-Performance Photodetectors

doi:10.1007/s11664-020-08215-6

	Effect of Air Atmosphere Sensitization on Formation of PbSe p-n Junctions for High-Performance Photodetectors
	Yan, Shunya 1,2; Yang, Qi 1; Feng, Shuanglong 1; Shen, Jun 1; Yang, Jun 1; Tang, Linlong 1; Leng, Chongqian 1; Zhou, Dahua 1
刊名	JOURNAL OF ELECTRONIC MATERIALS
	2020-05-27
页码	7
关键词	PbSe infrared detector sensitized mechanism p-n junction
ISSN号	0361-5235
DOI	10.1007/s11664-020-08215-6
通讯作者	Zhou, Dahua(zhoudahua@cigit.ac.cn)
英文摘要	Photodetectors based on polycrystalline lead salts are widely used to detect light in the mid-infrared range because they can be used at room temperature. In their fabrication, the sensitization process is considered to be the most critical factor. In this work, the crystalline structure of PbSe films deposited by electron-beam evaporation was analyzed by scanning electron microscopy, x-ray diffraction, and x-ray photoemission spectroscopy. The results showed that lead oxides were formed during the annealing process. We also investigated the electrical properties of the samples by Hall-effect measurements. In photodetection experiments at room temperature, the PbSe-based photodetectors showed responsivity and detectivity of 0.16 A/W and 6.66 x 10(8) cm Hz(1/2)/W, respectively. Remarkably, we measured a photocurrent even without applying a bias voltage, which implies that the p-n junctions separate the carriers in these films, thus also proving the existence of micro p-n junctions in the film. A carrier separation model is proposed to describe the conduction process.
资助项目	National Nature Science Foundation of China[61704172] ; Venture & Innovation support Program for Chongqing Overseas Return[cx2018153]
WOS研究方向	Engineering ; Materials Science ; Physics
语种	英语
出版者	SPRINGER
WOS记录号	WOS:000536051900003
内容类型	期刊论文
源URL	[http://119.78.100.138/handle/2HOD01W0/11132]
专题	中国科学院重庆绿色智能技术研究院
通讯作者	Zhou, Dahua
作者单位	1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing Key Lab Multiscale Mfg Technol, Chongqing 400714, Peoples R China 2.Southwest Univ, Sch Phys Sci & Technol, MOE Key Lab Luminescence & Real Time Anal, Chongqing 400715, Peoples R China
推荐引用方式 GB/T 7714	Yan, Shunya,Yang, Qi,Feng, Shuanglong,et al. Effect of Air Atmosphere Sensitization on Formation of PbSe p-n Junctions for High-Performance Photodetectors[J]. JOURNAL OF ELECTRONIC MATERIALS,2020:7.
APA	Yan, Shunya.,Yang, Qi.,Feng, Shuanglong.,Shen, Jun.,Yang, Jun.,...&Zhou, Dahua.(2020).Effect of Air Atmosphere Sensitization on Formation of PbSe p-n Junctions for High-Performance Photodetectors.JOURNAL OF ELECTRONIC MATERIALS,7.
MLA	Yan, Shunya,et al."Effect of Air Atmosphere Sensitization on Formation of PbSe p-n Junctions for High-Performance Photodetectors".JOURNAL OF ELECTRONIC MATERIALS (2020):7.