Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering

	Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering
	Yu, Qian ; Li, Wenwu ; Liang, Jiran ; Duan, Zhihua ; Hu, Zhigao ; Liu, Jian ; Chen, Hongda ; Chu, Junhao
刊名	journal of physics d-applied physics
	2013
卷号	46 期号:5 页码:055310
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-10-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24408]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Yu, Qian,Li, Wenwu,Liang, Jiran,et al. Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering[J]. journal of physics d-applied physics,2013,46(5):055310.
APA	Yu, Qian.,Li, Wenwu.,Liang, Jiran.,Duan, Zhihua.,Hu, Zhigao.,...&Chu, Junhao.(2013).Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering.journal of physics d-applied physics,46(5),055310.
MLA	Yu, Qian,et al."Oxygen pressure manipulations on the metal-insulator transition characteristics of highly (0 1 1)-oriented vanadium dioxide films grown by magnetron sputtering".journal of physics d-applied physics 46.5(2013):055310.