Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure | |
Yu, Guohao ; Wang, Yue ; Cai, Yong ; Dong, Zhihua ; Zeng, Chunhong ; Zhang, Baoshun | |
刊名 | ieee electron device letters
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2013 | |
卷号 | 34期号:2页码:217-219 |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-10-08 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/24407] ![]() |
专题 | 半导体研究所_集成光电子学国家重点实验室 |
推荐引用方式 GB/T 7714 | Yu, Guohao,Wang, Yue,Cai, Yong,et al. Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure[J]. ieee electron device letters,2013,34(2):217-219. |
APA | Yu, Guohao,Wang, Yue,Cai, Yong,Dong, Zhihua,Zeng, Chunhong,&Zhang, Baoshun.(2013).Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure.ieee electron device letters,34(2),217-219. |
MLA | Yu, Guohao,et al."Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure".ieee electron device letters 34.2(2013):217-219. |
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