Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure

	Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure
	Yu, Guohao ; Wang, Yue ; Cai, Yong ; Dong, Zhihua ; Zeng, Chunhong ; Zhang, Baoshun
刊名	ieee electron device letters
	2013
卷号	34 期号:2 页码:217-219
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2013-10-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24407]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Yu, Guohao,Wang, Yue,Cai, Yong,et al. Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure[J]. ieee electron device letters,2013,34(2):217-219.
APA	Yu, Guohao,Wang, Yue,Cai, Yong,Dong, Zhihua,Zeng, Chunhong,&Zhang, Baoshun.(2013).Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure.ieee electron device letters,34(2),217-219.
MLA	Yu, Guohao,et al."Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure".ieee electron device letters 34.2(2013):217-219.