Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy

	Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy
	Guo, Xiaolu ; Ma, Wenquan ; Huang, Jianliang ; Zhang, Yanhua ; Wei, Yang ; Cui, Kai ; Cao, Yulian ; Li, Qiong
刊名	semiconductor science and technology
	2013
卷号	28 期号:4 页码:045004
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-10-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24413]
专题	半导体研究所_纳米光电子实验室
推荐引用方式 GB/T 7714	Guo, Xiaolu,Ma, Wenquan,Huang, Jianliang,et al. Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy[J]. semiconductor science and technology,2013,28(4):045004.
APA	Guo, Xiaolu.,Ma, Wenquan.,Huang, Jianliang.,Zhang, Yanhua.,Wei, Yang.,...&Li, Qiong.(2013).Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy.semiconductor science and technology,28(4),045004.
MLA	Guo, Xiaolu,et al."Electrical properties of the absorber layer for mid, long and very long wavelength detection using type-II InAs/GaSb superlattice structures grown by molecular beam epitaxy".semiconductor science and technology 28.4(2013):045004.