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题名	低红外发射率涂层材料的制备和性能研究
作者	赵亮
学位类别	硕士
答辩日期	2012-06-01
授予单位	中国科学院研究生院
导师	朱永平
关键词	ZnO 红外发射率 等离子喷涂
其他题名	Preparation and Performance Study on the Coating Materials with Low Infrared Emissivity
学位专业	化学工程
中文摘要	低红外发射率材料一般即可称作红外发射率低于0.5的材料，这类材料在红外隐身涂层和高温热防护涂层等领域具有重要的应用。目前关于此类材料的研究主要集中在中低温低红外发射率薄膜，其应用温度一般小于250℃，可以应用在高温条件下(>800℃)的低红外发射率涂层材料的研究还比较薄弱。由于氧化物半导体材料在红外波段内没有本征吸收，而且其高温热稳定性能优异，因此，氧化物半导体材料被认为是最具发展前途的高温低红外发射率材料。本文采用多种方法制备了ZnO及掺杂ZnO粉体材料，对其红外发射率进行了表征，并利用大气等离子喷涂技术将合成的粉体材料制备为涂层，对涂层的红外发射率进行测试。研究发现： (1) ZnO粉体的红外发射率随着形貌的不同而发生变化，其中哑铃形ZnO的红外发射率最小，其次是片状，而最高的是球形粉体。在测试温度范围内，ZnO粉体材料的红外发射率随着测试温度的升高而呈现出不断下降的趋势。 (2) 对ZnO粉体进行掺杂处理后，材料的红外发射率降低。一般而言，掺杂ZnO粉体的红外发射率随着掺杂量的增加呈现出先降低后升高的趋势，只有当掺杂量合适时，材料的红外发射率才达到最小。当采用共沉淀方法制备掺杂ZnO粉体材料时，材料的红外发射率还随着后处理温度的变化而变化，只有当热处理温度最佳时，才能获得低红外发射率的材料。当Al的掺杂量为10%时，Al掺杂ZnO粉体材料的红外发射率达到最低，对应于0~∞、3~5 μm、8~14 μm和14~20 μm波段内的数值分别为0.51、0.38、0.57和0.61；当Sn的掺杂量为15%，后处理温度为1000 ℃时，Sn掺杂ZnO粉体材料的红外发射率最低，对应于0~∞、3~5 μm、8~14 μm和14~20 μm波段内的数值分别为0.42、0.28、0.46和0.48；当Sb的掺杂量为5%，后处理温度为1000 ℃时，Sb掺杂ZnO粉体材料的红外发射率最低，对应于0~∞、3~5 μm、8~14 μm和14~20 μm波段内的数值分别为0.41、0.29、0.50和0.55。当Al和Sn的掺杂量均为5%，后处理温度为700 ℃时，(Al,Sn)共掺杂ZnO粉体材料的红外发射率最低，对应于0~∞、3~5 μm、8~14 μm和14~20 μm波段内数值分别为0.40、0.30、0.45和0.47。 (3) ZnO及掺杂ZnO涂层材料的红外发射率要远远高于粉体材料，这主要是由于涂层表面的粗糙度过高引起的。对涂层表面进行抛光处理后，涂层材料的红外发射率会有所降低，但红外发射率的数值仍然比较高。目前得到的涂层的最小红外发射率，对应于0~∞、3~5 μm、8~14 μm和14~20 μm波段内数值分别为0.72、0.60、0.78和0.74。
英文摘要	Low infrared emissivity materials (low-E materials), the infrared emissivity of which is lower than 0.5, can be applied in the fields of camouflaging military equipments and heat loss control as thermal protection coatings. The applied temperature of low-E materials is generally at low temparatures (<250℃), however the increase of the speed of the aerocraft requires higher temperature applications of low-E materials. Oxide semiconductors with good thermal properties have the potential of the application as high-temperature low-E materials because there are no absorptance peaks of oxide semiconductors in the infrared wavebands. In the present particle, ZnO and doped ZnO powders were synthesized by the methods of hydrothermal reaction, co-precipitate and sol-gel and characterized by XRD, SEM and IREF-1 Infrared Emission Thermometer. Then ZnO and doped ZnO coatings were prepared by the synthesized powder through air plasma spay technique and charaterzied by XRD, SEM and IREF-1 Infrared Emission Thermometer. The obtained main results are summarized as follows: (1) The morphologies have an important effect on the infrared emissivity of ZnO particles. The infrared emissivity of dumbbell-like ZnO particles is lower than that of sheet-like and sphere ZnO particles. What’s more, the infrared emissivity of ZnO particles decreases with the increase of the measuring temperature. (2) The introduction of impurity element in ZnO particles is benefitial for the decrease of the infrared emissivity. The doped concentration and thermal process temperature have an essential effect on the infrared emissivity of ZnO particles, and only when the doped concentration and thermal process temperature are both optimal the lowest values of infrared emissivity of ZnO particles can be obtained. When the doped concentration is 10%, the infrared emissivity of Al doped ZnO particles is lower than other doped concentrations, and the infrared emissivity values are 0.51, 0.38, 0.57, and 0.61 corresponding to the wavebands of 0~∞, 3~5 μm, 8~14 μm and 14~20 μm; the lowest values of infrared emissivity of Sn doped ZnO particles are obtained when the doped concentration and thermal process temperature are 15% and 1000 ℃ respectively, and the values are 0.42, 0.28, 0.46, and 0.48 corresponding to the wavebands of 0~∞, 3~5 μm, 8~14 μm and 14~20 μm; when the doped concentration is 5% and the process temperature is 1000 ℃, the values of infrared emissivity of Sb doped ZnO particles are lowest and the values are 0.41, 0.29, 0.50, and 0.55 corresponding to the wavebands of 0~∞, 3~5 μm, 8~14 μm and 14~20 μm; the values of infrared emissivity of (Al,Sn) co-doped ZnO particles are lowest when the doped concentration of Al and Sn are both 5% and the process temperature is 700℃, and the values are 0.40, 0.30, 0.45, and 0.47 corresponding to the wavebands of 0~∞, 3~5 μm, 8~14 μm and 14~20 μm. (3) The values of infrared emissivity of ZnO and doped ZnO coatings are much higher than those of the powder because of the high roughness of the surface of the coatings. The polishment of the coating has a positive effect on the reduction of the infrared emissivity of the coating, but the values of the infrared emissivity are still relatively high. The lowest infrared emissivity values of the coating obtained in the particle are 0.72, 0.60, 0.78, and 0.74 corresponding to the wavebands of 0~∞, 3~5 μm, 8~14 μm and 14~20 μm.
语种	中文
公开日期	2013-09-25
内容类型	学位论文
源URL	[http://ir.ipe.ac.cn/handle/122111/1805]
专题	过程工程研究所_研究所（批量导入）
推荐引用方式 GB/T 7714	赵亮. 低红外发射率涂层材料的制备和性能研究[D]. 中国科学院研究生院. 2012.

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