Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well | |
Jin, Dong-Dong ; Jiang, Chao ; Li, Guo-Dong ; Zhang, Liu-Wan ; Yang, Tao ; Liu, Xiang-Lin ; Yang, Shao-Yan ; Zhu, Qin-Sheng ; Wang, Zhan-Guo | |
刊名 | journal of applied physics |
2013 | |
卷号 | 113期号:3页码:033701 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-22 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/24397] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Jin, Dong-Dong,Jiang, Chao,Li, Guo-Dong,et al. Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well[J]. journal of applied physics,2013,113(3):033701. |
APA | Jin, Dong-Dong.,Jiang, Chao.,Li, Guo-Dong.,Zhang, Liu-Wan.,Yang, Tao.,...&Wang, Zhan-Guo.(2013).Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well.journal of applied physics,113(3),033701. |
MLA | Jin, Dong-Dong,et al."Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well".journal of applied physics 113.3(2013):033701. |
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