Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode

	Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode
	Wang, C. ; Qu, H. J. ; Chen, W. X. ; Ran, G. Z. ; Yu, H. Y. ; Niu, B. ; Pan, J. Q. ; Wang, W.
刊名	applied physics letters
	2013
卷号	102 期号:6 页码:061112
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2013-09-22
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24375]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wang, C.,Qu, H. J.,Chen, W. X.,et al. Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode[J]. applied physics letters,2013,102(6):061112.
APA	Wang, C..,Qu, H. J..,Chen, W. X..,Ran, G. Z..,Yu, H. Y..,...&Wang, W..(2013).Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode.applied physics letters,102(6),061112.
MLA	Wang, C.,et al."Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode".applied physics letters 102.6(2013):061112.