The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets

doi:10.1007/JHEP01(2019)149

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	The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets
	Liang, ZL ; Zhang, L 1,2; Zhang, P ; Zheng, FW
刊名	JOURNAL OF HIGH ENERGY PHYSICS
	2019
期号	1 页码:149
关键词	DARK-MATTER PSEUDOPOTENTIALS
ISSN号	1029-8479
DOI	10.1007/JHEP01(2019)149
英文摘要	The physics of the electronic excitation in semiconductors induced by sub-GeV dark matter (DM) have been extensively discussed in literature, under the framework of the standard plane wave (PW) and pseudopotential calculation scheme. In this paper, we investigate the implication of the all-electron (AE) reconstruction on estimation of the DM-induced electronic transition event rates. As a benchmark study, we first calculate the wavefunctions in silicon and germanium bulk crystals based on both the AE and pseudo (PS) schemes within the projector augmented wave (PAW) framework, and then make comparisons between the calculated excitation event rates obtained from these two approaches. It turns out that in process where large momentum transfer is kinetically allowed, the two calculated event rates can differ by a factor of a few. Such discrepancies are found to stem from the high-momentum components neglected in the PS scheme. It is thus implied that the correction from the AE wavefunction in the core region is necessary for an accurate estimate of the DM-induced transition event rate in semiconductors.
学科主题	Physics
语种	英语
内容类型	期刊论文
源URL	[http://ir.itp.ac.cn/handle/311006/23506]
专题	理论物理研究所_理论物理所1978-2010年知识产出
作者单位	1.Univ Chinese Acad Sci, Sch Phys Sci, Yuquan Rd 19 A, Beijing 100049, Peoples R China 2.Inst Appl Phys & Computat Math, Huayuan Rd 6, Beijing 100088, Peoples R China 3.Chinese Acad Sci, CAS Key Lab Theoret Phys, Inst Theoret Phys, Zhong Guan Cun East St 55, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Liang, ZL,Zhang, L,Zhang, P,et al. The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets[J]. JOURNAL OF HIGH ENERGY PHYSICS,2019(1):149.
APA	Liang, ZL,Zhang, L,Zhang, P,&Zheng, FW.(2019).The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets.JOURNAL OF HIGH ENERGY PHYSICS(1),149.
MLA	Liang, ZL,et al."The wavefunction reconstruction effects in calculation of DM-induced electronic transition in semiconductor targets".JOURNAL OF HIGH ENERGY PHYSICS .1(2019):149.