Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process

doi:10.1039/c9nr09781c

CORC > 金属研究所 > 中国科学院金属研究所

	Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process
	Zhang, Cai; Liu, Xiaoyuan; Li, Jing; Zhang, Xinglai; Yang, Wenjing; Jin, Xin; Liu, Fei; Yao, Jinlei; Jiang, Xin; Liu, Baodan
刊名	NANOSCALE
	2020-02-21
卷号	12 期号:7 页码:4393-4399
DOI	10.1039/c9nr09781c
英文摘要	The growth of nonpolar GaN nanowires along the [10 (1) over bar0] orientation has been demonstrated via a modified hydride vapor phase epitaxy (HVPE) process using GaCl3 and NH3 as precursors. The morphology and structure evolution as a dependence of the growth parameters was thoroughly studied to elucidate the nucleation and crystallization of nonpolar GaN nanowires. It has been found that the V/III ratio and temperature are critically important for the formation of high-quality nonpolar GaN nanowires. The existence of a cubic GaN (c-GaN) transition layer between the Au catalyst and hexagonal GaN (h-GaN) nonpolar nanowires was demonstrated by high-resolution transmission electron microscopy (HRTEM) characterization, which plays an important role in the initial nucleation of nonpolar GaN nanowires and the formation of stacking faults (SFs) in the GaN nanowires grown at lower temperature. Optical investigations show that the defect-related visible emission of nonpolar GaN nanowires is closely related to the growth process and can be selectively tailored. The synthetic strategyy using GaCl3 as the Ga precursor to study the vapor phase epitaxy process in this work will provide a simple and efficient approach to obtain nonpolar GaN nanowires and will thus pave a solid way for fundamental research on high-quality nonpolar GaN nanowires in optoelectronic nanodevices.
WOS记录号	WOS:000531408100015
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/155716]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Zhang, Cai,Liu, Xiaoyuan,Li, Jing,et al. Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process[J]. NANOSCALE,2020,12(7):4393-4399.
APA	Zhang, Cai.,Liu, Xiaoyuan.,Li, Jing.,Zhang, Xinglai.,Yang, Wenjing.,...&Liu, Baodan.(2020).Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process.NANOSCALE,12(7),4393-4399.
MLA	Zhang, Cai,et al."Investigation of catalyst-assisted growth of nonpolar GaN nanowires via a modified HVPE process".NANOSCALE 12.7(2020):4393-4399.