Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering

doi:10.1002/admi.201901365

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	Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering
	Zhang, Xinglai 2; Zhang, Jian 2; Leng, Bing 3; Li, Jing 2; Ma, Zongyi 2; Yang, Wenjin 2; Liu, Fei 1,4; Liu, Baodan 2
刊名	ADVANCED MATERIALS INTERFACES
	2019-12-06
卷号	6 期号:23 页码:8
关键词	graphene heterojunction photodetectors piezo-phototronic effect ZnO nanorods
ISSN号	2196-7350
DOI	10.1002/admi.201901365
通讯作者	Liu, Baodan(baodanliu@imr.ac.cn)
英文摘要	The piezo-phototronic effect can effectively engineer the energy band structure at the local interface of piezo-semiconductor junction, and thus improve the performance of optoelectronics. In this work, a high-performance poly(9-vinylcarbazole) (PVK)/ZnO nanorods/graphene heterostructure photodetector is designed and fabricated using a multi-step process. By introducing a -1.093% compressive strain to the hybrid heterostructure, carrier-dynamics modulation at the local junctions can be induced by the piezoelectric polarization, and the photoresponsivity and the specific detectivity of the photodetector can be enhanced approximate to 440% and approximate to 132% under UV light illumination with the peak values up to 80.6 A W-1 and 2.3 x 10(11) Jones, respectively. The photoresponse enhancement is attributed to the piezopotential generated at PVK/ZnO and ZnO/graphene interfaces, which promote the separation and transfer of photogenerated carriers. Physical working mechanism behind the observed results is discussed via energy band diagram. This work not only presents a new way to achieve the higher performance in photodetectors by fully utilizing piezo-phototronic interface engineering but also provides a deep understanding of piezo-phototronic effect on optoelectronic devices.
资助项目	National Natural Science Foundation of China[51702326] ; National Natural Science Foundation of China[51872296] ; Shenyang Science and Technology Program[18-013-0-52] ; Youth Innovation Promotion Association of the Chinese Academy of Sciences[2019197] ; Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University)[OEMT-2017-KF-02]
WOS研究方向	Chemistry ; Materials Science
语种	英语
出版者	WILEY
WOS记录号	WOS:000527330100016
资助机构	National Natural Science Foundation of China ; Shenyang Science and Technology Program ; Youth Innovation Promotion Association of the Chinese Academy of Sciences ; Open Fund of the State Key Laboratory of Optoelectronic Materials and Technologies (Sun Yat-Sen University)
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/138237]
专题	金属研究所_中国科学院金属研究所
通讯作者	Liu, Baodan
作者单位	1.Sun Yat Sen Univ, Sch Elect & Informat Technol, Guangzhou 510275, Guangdong, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China 3.China Med Univ, Affiliated Hosp 1, Dept Plast Surg, Shenyang 110001, Peoples R China 4.Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Xinglai,Zhang, Jian,Leng, Bing,et al. Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering[J]. ADVANCED MATERIALS INTERFACES,2019,6(23):8.
APA	Zhang, Xinglai.,Zhang, Jian.,Leng, Bing.,Li, Jing.,Ma, Zongyi.,...&Liu, Baodan.(2019).Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering.ADVANCED MATERIALS INTERFACES,6(23),8.
MLA	Zhang, Xinglai,et al."Enhanced Performances of PVK/ZnO Nanorods/Graphene Heterostructure UV Photodetector via Piezo-Phototronic Interface Engineering".ADVANCED MATERIALS INTERFACES 6.23(2019):8.