From linear magnetoresistance to parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films

doi:10.1016/j.jpcs.2017.07.003

CORC > 金属研究所 > 中国科学院金属研究所

	From linear magnetoresistance to parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films
	Li, Mingze 1,2; Wang, Zhenhua 1,2; Yang, Liang 1,2; Gao, Xuan P. A.3; Zhang, Zhidong 1,2
刊名	JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
	2019-05-01
卷号	128 页码:331-336
关键词	Topological insulator Bismuth selenide Magnetoresistance Magnetic doping Thin film
ISSN号	0022-3697
DOI	10.1016/j.jpcs.2017.07.003
通讯作者	Wang, Zhenhua(zhwang@imr.ac.cn) ; Gao, Xuan P. A.(xuan.gao@case.edu)
英文摘要	We report on the magnetotransport properties of Cu- and Cr-doped topological insulator Bi2Se3 films grown on silicon (100) substrate by chemical vapor deposition. Upon doping of non-magnetic Cu, Bi2Se3 film's carrier density is reduced and the magnetoresistance changes from a strong positive parabolic magnetoresistance to a linear magnetoresistance. This linear magnetoresistance is similar to the linear magnetoresistance in other gapless topological states of matter and has a strong temperature dependence. In contrast, the magnetoresistance of Crdoped Bi2Se3 films remains to be parabolic and becomes temperature independent upon increased Cr-doping. These results suggest that the absence of linear magnetoresistance in Cr-doped Bi2Se3 is related to the magnetic dopants that induce time reversal symmetry breaking and surface states gap opening.
资助项目	National Natural Science Foundation of China[51522104] ; National Natural Science Foundation of China[51331006] ; National Basic Research Program[2017YFA0206302] ; National Science Foundation[DMR-1151534]
WOS研究方向	Chemistry ; Physics
语种	英语
出版者	PERGAMON-ELSEVIER SCIENCE LTD
WOS记录号	WOS:000472693100037
资助机构	National Natural Science Foundation of China ; National Basic Research Program ; National Science Foundation
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/133966]
专题	金属研究所_中国科学院金属研究所
通讯作者	Wang, Zhenhua; Gao, Xuan P. A.
作者单位	1.Univ Sci & Technol China, Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 2.Univ Sci & Technol China, Sch Mat Sci & Engn, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 3.Case Western Reserve Univ, Dept Phys, Cleveland, OH 44106 USA
推荐引用方式 GB/T 7714	Li, Mingze,Wang, Zhenhua,Yang, Liang,et al. From linear magnetoresistance to parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2019,128:331-336.
APA	Li, Mingze,Wang, Zhenhua,Yang, Liang,Gao, Xuan P. A.,&Zhang, Zhidong.(2019).From linear magnetoresistance to parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,128,331-336.
MLA	Li, Mingze,et al."From linear magnetoresistance to parabolic magnetoresistance in Cu and Cr-doped topological insulator Bi2Se3 films".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 128(2019):331-336.