Effect of Reverse Pulse on Additives Adsorption and Copper Filling for Through Silicon Via

doi:10.1149/2.0021901jes

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	Effect of Reverse Pulse on Additives Adsorption and Copper Filling for Through Silicon Via
	Zhu, Q. S.3; Zhang, X.3; Liu, C. Z.2; Liu, H. Y.1
刊名	JOURNAL OF THE ELECTROCHEMICAL SOCIETY
	2018-08-07
卷号	166 期号:1 页码:D3006-D3012
ISSN号	0013-4651
DOI	10.1149/2.0021901jes
通讯作者	Zhu, Q. S.(qszhu@imr.ac.cu) ; Zhang, X.(xzhang14s@imr.ac.cn) ; Liu, C. Z.(czliu@sau.edu.cn)
英文摘要	In order to develop the suitable Cu electrolyte for TSV filling using period pulse reverse (PPR) electroplating, the operating mechanism of reverse pulse on the adsorption of additives within TSV was systematically investigated. Whether the promotion or reduction of the adsorption of polyethylene glycol (PEG), bis (sodiumsulfopropyl) disulfide (SPS) and Janus Green B (JGB) by reverse pulse was determined by the charge of the formed complex of this additive with Cu+ and Cl-. The charge of formed complex was dependent on the Cl- concentration. The reverse pulse had no significant effect on the adsorption of single JGB. In comparison, the composite JGB-PEG inhibitor could be repelled by reverse pulse at the microvia bottom. For the composite PEG-SPS or PEG-JGB-SPS, since the preferentially adsorbed Cu+-Cl--PEG dense layer could effectively block the transportation of Cl- , few sites of Cl- were left for the SPS adsorption and then mainly formed positively charged SPS-Cu+, which accounted for the detachment of SPS by anodic pulse current at microvia entrance in the presence of PEG. Based on the change of the additives coverage surface by reverse pulse, the microvia filling performances in PPR plating compared to those in DC plating could be well explained. (C) The Author(s) 2018. Published by ECS.
资助项目	National Natural Science Foundation of China (NSFC)[51471180] ; Science and Technology Program of Shenyang[F16-205-1-18]
WOS研究方向	Electrochemistry ; Materials Science
语种	英语
出版者	ELECTROCHEMICAL SOC INC
WOS记录号	WOS:000441159200002
资助机构	National Natural Science Foundation of China (NSFC) ; Science and Technology Program of Shenyang
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/128811]
专题	金属研究所_中国科学院金属研究所
通讯作者	Zhu, Q. S.; Zhang, X.; Liu, C. Z.
作者单位	1.Natl Ctr Adv Packaging Co Ltd, NCAP China, Wuxi 214135, Peoples R China 2.Shenyang Aerosp Univ, Coll Mat Sci & Engn, Shenyang 110136, Liaoning, Peoples R China 3.Chinese Acad Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China
推荐引用方式 GB/T 7714	Zhu, Q. S.,Zhang, X.,Liu, C. Z.,et al. Effect of Reverse Pulse on Additives Adsorption and Copper Filling for Through Silicon Via[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY,2018,166(1):D3006-D3012.
APA	Zhu, Q. S.,Zhang, X.,Liu, C. Z.,&Liu, H. Y..(2018).Effect of Reverse Pulse on Additives Adsorption and Copper Filling for Through Silicon Via.JOURNAL OF THE ELECTROCHEMICAL SOCIETY,166(1),D3006-D3012.
MLA	Zhu, Q. S.,et al."Effect of Reverse Pulse on Additives Adsorption and Copper Filling for Through Silicon Via".JOURNAL OF THE ELECTROCHEMICAL SOCIETY 166.1(2018):D3006-D3012.