THE BINDING-ENERGY OF AN EXCITON IN TYPE-II QUANTUM-WELLS WITH A DIELECTRIC MISMATCH | |
GAO, EZ; GU, SW | |
刊名 | COMMUNICATIONS IN THEORETICAL PHYSICS
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1993 | |
卷号 | 20期号:2页码:141-146 |
ISSN号 | 0253-6102 |
通讯作者 | GAO, EZ() |
英文摘要 | From a general viewpoint, the binding energy of the excitons in type-II hetero-quantum-wells with the presence of a dielectric mismatch is discussed by making use of image potentials, variational method and infinite-potential-barrier model. The calculation is performed for various parameters including the electron-hole mass ratio sigma, dielectric constant ratio delta and well width d. A static Gabovish-type potential is engaged to describe the image potential inside the well. It is found that the image potential may play an important role in the formation of the excitons. The contribution of image potentials to the binding energy is compared with binding energy for two kinds of type-II hetero-QWs, GaSb-InAs-GaSb and AlAs-GaAs-AlAs. In these two cases, the image potentials are above 10% of the corresponding binding energies. |
WOS研究方向 | Physics |
语种 | 英语 |
出版者 | HUAZHONG UNIV SCI TECH PRESS |
WOS记录号 | WOS:A1993MJ05300003 |
内容类型 | 期刊论文 |
源URL | [http://ir.imr.ac.cn/handle/321006/126532] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | GAO, EZ |
作者单位 | 1.CHINESE ACAD SCI,INT CTR MAT PHYS,BEIJING,PEOPLES R CHINA 2.JIAO TONG UNIV,INST CONDENSED MATTER PHYS,SHANGHAI 200030,PEOPLES R CHINA |
推荐引用方式 GB/T 7714 | GAO, EZ,GU, SW. THE BINDING-ENERGY OF AN EXCITON IN TYPE-II QUANTUM-WELLS WITH A DIELECTRIC MISMATCH[J]. COMMUNICATIONS IN THEORETICAL PHYSICS,1993,20(2):141-146. |
APA | GAO, EZ,&GU, SW.(1993).THE BINDING-ENERGY OF AN EXCITON IN TYPE-II QUANTUM-WELLS WITH A DIELECTRIC MISMATCH.COMMUNICATIONS IN THEORETICAL PHYSICS,20(2),141-146. |
MLA | GAO, EZ,et al."THE BINDING-ENERGY OF AN EXCITON IN TYPE-II QUANTUM-WELLS WITH A DIELECTRIC MISMATCH".COMMUNICATIONS IN THEORETICAL PHYSICS 20.2(1993):141-146. |
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