Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy

doi:10.1016/j.apsusc.2011.05.055

CORC > 金属研究所 > 中国科学院金属研究所

	Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy
	Pan, Xu 2; Wang, Xiaoliang 1,2; Xiao, Hongling 1,2; Wang, Cuimei 1,2; Yang, Cuibai 1,2; Li, Wei 1; Wang, Weiying 1; Jin, Peng 1; Wang, Zhanguo 1,2
刊名	APPLIED SURFACE SCIENCE
	2011-08-01
卷号	257 期号:20 页码:8718-8721
关键词	Photoluminescence Raman scattering Pulsed atomic layer epitaxy AlGaN alloys
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2011.05.055
通讯作者	Pan, Xu(xpan@semi.ac.cn)
英文摘要	Al(0.91)Ga(0.09)N epilayers have been obtained by pulsed atomic layer epitaxy (PALE) technique on sapphire (0 0 0 1) substrates. Deep ultraviolet (DUV) photoluminescence (PL) spectroscopy and Raman scattering spectrum have been employed to study the optical transitions in Al(0.91)Ga(0.09)N epilayers. We found the exciton-phonon interaction by fitting the asymmetric PL peak, in which the transverse optical phonon (TO) and the longitudinal optical (LO) phonon are the main contributor. The abnormal S-shaped temperature dependence of the PL band peak is less pronounced or has disappeared. Further analysis shows that there possibly exists a high density of deeper localized state (similar to 90 meV) in Al(0.91)Ga(0.09)N. The formation of these localized states provides a favorable condition for efficient light emission. (C) 2011 Elsevier B.V. All rights reserved.
资助项目	Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02]
WOS研究方向	Chemistry ; Materials Science ; Physics
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000291725100070
资助机构	Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/107185]
专题	金属研究所_中国科学院金属研究所
通讯作者	Pan, Xu
作者单位	1.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Pan, Xu,Wang, Xiaoliang,Xiao, Hongling,et al. Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy[J]. APPLIED SURFACE SCIENCE,2011,257(20):8718-8721.
APA	Pan, Xu.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yang, Cuibai.,...&Wang, Zhanguo.(2011).Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy.APPLIED SURFACE SCIENCE,257(20),8718-8721.
MLA	Pan, Xu,et al."Characteristics of high Al content AlGaN grown by pulsed atomic layer epitaxy".APPLIED SURFACE SCIENCE 257.20(2011):8718-8721.