The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure | |
Bi, Y.1; Wang, X. L.1,2; Xiao, H. L.1,2; Wang, C. M.1,2; Peng, E. C.1; Lin, D. F.1; Feng, C.1,2; Jiang, L. J.1,2 | |
刊名 | EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
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2011-07-01 | |
卷号 | 55期号:1页码:5 |
ISSN号 | 1286-0042 |
DOI | 10.1051/epjap/2011110184 |
通讯作者 | Bi, Y.(ybi@semi.ac.cn) |
英文摘要 | This is a theoretical study of the InGaN back-barrier on the properties of the Al0.3Ga0.7N/AlN/GaN/InGaN/GaN HEMT structure by self-consistently solving coupled Schrodinger and Poisson equations. Our calculation shows that by increasing the indium composition, the conduction band of the GaN buffer layer is raised and the confinement of 2DEG is improved. However, the additional quantum well formed by InGaN becomes deeper, inducing and confining more electrons in it. Another conductive channel is formed which may impair the device performance. With the increasing InGaN thickness, the well depth remains the same and the conduction band of GaN buffer layer rises, enhancing the confinement of the 2DEG without inducing more electrons in the well. The 2DEG sheet density decreases slightly with the indium composition and the physical mechanism is discussed. Low indium composition and thick InGaN back-barrier layer are beneficial to mitigate the short-channel effects, especially for high-frequency devices. |
资助项目 | Knowledge Innovation Engineering of Chinese Academy of Sciences[YYYJ-0701-02] ; National Nature Sciences Foundation of China[60890193] ; National Nature Sciences Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] |
WOS研究方向 | Physics |
语种 | 英语 |
出版者 | CAMBRIDGE UNIV PRESS |
WOS记录号 | WOS:000292960600002 |
资助机构 | Knowledge Innovation Engineering of Chinese Academy of Sciences ; National Nature Sciences Foundation of China ; State Key Development Program for Basic Research of China ; Chinese Academy of Sciences |
内容类型 | 期刊论文 |
源URL | [http://ir.imr.ac.cn/handle/321006/104471] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | Bi, Y. |
作者单位 | 1.Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China |
推荐引用方式 GB/T 7714 | Bi, Y.,Wang, X. L.,Xiao, H. L.,et al. The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure[J]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,2011,55(1):5. |
APA | Bi, Y..,Wang, X. L..,Xiao, H. L..,Wang, C. M..,Peng, E. C..,...&Jiang, L. J..(2011).The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure.EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS,55(1),5. |
MLA | Bi, Y.,et al."The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure".EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS 55.1(2011):5. |
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