An investigation on InxGa1-xN/GaN multiple quantum well solar cells

doi:10.1088/0022-3727/44/26/265103

CORC > 金属研究所 > 中国科学院金属研究所

	An investigation on InxGa1-xN/GaN multiple quantum well solar cells
	Deng, Qingwen 1; Wang, Xiaoliang 1,2,3; Xiao, Hongling 1,3; Wang, Cuimei 1,3; Yin, Haibo 1,3; Chen, Hong 1,3; Hou, Qifeng 1; Lin, Defeng 1; Li, Jinmin 1,2,3; Wang, Zhanguo 3
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2011-07-06
卷号	44 期号:26 页码:6
ISSN号	0022-3727
DOI	10.1088/0022-3727/44/26/265103
通讯作者	Deng, Qingwen(daven@semi.ac.cn)
英文摘要	The conversion efficiency of InxGa1-xN/GaN multiple quantum well solar cells is originally investigated in theory based on the ideal diode model and the ideal unity quantum well model. The results reveal that the conversion efficiency partially depends on the width of the quantum well and the thickness of the barrier region but is dominated by the number of quantum wells and indium content of InxGa1-xN. The calculated results are found to be basically trustworthy by comparing with reported experimental results. An In0.15Ga0.85N/GaN multiple quantum well solar cell is successfully fabricated with a conversion efficiency of 0.2%. The main discrepancy between calculated and experimental results is the material quality and manufacturing technology which need to be improved.
资助项目	Chinese Academy of Sciences[YYYJ-0701-02] ; Chinese Academy of Sciences[ISCAS2008T01] ; Chinese Academy of Sciences[ISCAS2009L01] ; Chinese Academy of Sciences[ISCAS2009L02] ; National Natural Science Foundation of China[60890193] ; National Natural Science Foundation of China[60906006] ; State Key Development Program for Basic Research of China[2006CB604905] ; State Key Development Program for Basic Research of China[2010CB327503]
WOS研究方向	Physics
语种	英语
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000291685100010
资助机构	Chinese Academy of Sciences ; National Natural Science Foundation of China ; State Key Development Program for Basic Research of China
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/104128]
专题	金属研究所_中国科学院金属研究所
通讯作者	Deng, Qingwen
作者单位	1.Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China 2.ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China 3.Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Deng, Qingwen,Wang, Xiaoliang,Xiao, Hongling,et al. An investigation on InxGa1-xN/GaN multiple quantum well solar cells[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2011,44(26):6.
APA	Deng, Qingwen.,Wang, Xiaoliang.,Xiao, Hongling.,Wang, Cuimei.,Yin, Haibo.,...&Hou, Xun.(2011).An investigation on InxGa1-xN/GaN multiple quantum well solar cells.JOURNAL OF PHYSICS D-APPLIED PHYSICS,44(26),6.
MLA	Deng, Qingwen,et al."An investigation on InxGa1-xN/GaN multiple quantum well solar cells".JOURNAL OF PHYSICS D-APPLIED PHYSICS 44.26(2011):6.