The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2

doi:10.1016/j.intermet.2009.04.002

CORC > 金属研究所 > 中国科学院金属研究所

	The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2
	Chen, Y. C.2; Xu, J.3; Fan, X. H.1; Zhang, X. F.2; Han, L.2; Lin, D. Y.; Li, Q. H.; Uher, C.4
刊名	INTERMETALLICS
	2009-11-01
卷号	17 期号:11 页码:920-926
关键词	Composites, based on the intermetallics matrix Nanostructured intermetallics Diffusion Microstructure Thermoelectric power generation
ISSN号	0966-9795
DOI	10.1016/j.intermet.2009.04.002
通讯作者	Chen, Y. C.(matscichen@hotmail.com)
英文摘要	The as yet unresolved microstructure of the periodic layers formed in the reactive diffusion system Mg/SiO2 was clarified by using high-resolution field-emission SEM. The periodic layered structure actually consists of the single-phase layer of Mg2Si and the two-phase layer of (Mg2Si + MgO) alternated within the reaction zone. According to the experimental observations and in line with the diffusion-induced stresses model, the mechanism controlling this phenomenon could be attributed to the stresses induced by the difference in interface growth rates of Mg2Si and MgO phases within the layer. When the elastic deformation of the slow-growing aggregated-MgO phase reaches its elastic maximum, it will be split off from the reaction front by the neighboring Mg2Si phase and a new periodic layer forms. The computer simulation results are coinciding well with the experimental data. (C) 2009 Elsevier Ltd. All rights reserved.
资助项目	National Science Foundation of China[50601016]
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	ELSEVIER SCI LTD
WOS记录号	WOS:000269164600007
资助机构	National Science Foundation of China
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/97181]
专题	金属研究所_中国科学院金属研究所
通讯作者	Chen, Y. C.
作者单位	1.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Ctr Corros & Protect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Inst Mat Res, State Key Lab Corros & Protect, Shenyang 110016, Peoples R China 4.Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
推荐引用方式 GB/T 7714	Chen, Y. C.,Xu, J.,Fan, X. H.,et al. The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2[J]. INTERMETALLICS,2009,17(11):920-926.
APA	Chen, Y. C..,Xu, J..,Fan, X. H..,Zhang, X. F..,Han, L..,...&Uher, C..(2009).The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2.INTERMETALLICS,17(11),920-926.
MLA	Chen, Y. C.,et al."The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2".INTERMETALLICS 17.11(2009):920-926.