The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2 | |
Chen, Y. C.2; Xu, J.3; Fan, X. H.1; Zhang, X. F.2; Han, L.2; Lin, D. Y.; Li, Q. H.; Uher, C.4 | |
刊名 | INTERMETALLICS
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2009-11-01 | |
卷号 | 17期号:11页码:920-926 |
关键词 | Composites, based on the intermetallics matrix Nanostructured intermetallics Diffusion Microstructure Thermoelectric power generation |
ISSN号 | 0966-9795 |
DOI | 10.1016/j.intermet.2009.04.002 |
通讯作者 | Chen, Y. C.(matscichen@hotmail.com) |
英文摘要 | The as yet unresolved microstructure of the periodic layers formed in the reactive diffusion system Mg/SiO2 was clarified by using high-resolution field-emission SEM. The periodic layered structure actually consists of the single-phase layer of Mg2Si and the two-phase layer of (Mg2Si + MgO) alternated within the reaction zone. According to the experimental observations and in line with the diffusion-induced stresses model, the mechanism controlling this phenomenon could be attributed to the stresses induced by the difference in interface growth rates of Mg2Si and MgO phases within the layer. When the elastic deformation of the slow-growing aggregated-MgO phase reaches its elastic maximum, it will be split off from the reaction front by the neighboring Mg2Si phase and a new periodic layer forms. The computer simulation results are coinciding well with the experimental data. (C) 2009 Elsevier Ltd. All rights reserved. |
资助项目 | National Science Foundation of China[50601016] |
WOS研究方向 | Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering |
语种 | 英语 |
出版者 | ELSEVIER SCI LTD |
WOS记录号 | WOS:000269164600007 |
资助机构 | National Science Foundation of China |
内容类型 | 期刊论文 |
源URL | [http://ir.imr.ac.cn/handle/321006/97181] ![]() |
专题 | 金属研究所_中国科学院金属研究所 |
通讯作者 | Chen, Y. C. |
作者单位 | 1.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Ctr Corros & Protect, Beijing 100083, Peoples R China 2.Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China 3.Chinese Acad Sci, Inst Mat Res, State Key Lab Corros & Protect, Shenyang 110016, Peoples R China 4.Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA |
推荐引用方式 GB/T 7714 | Chen, Y. C.,Xu, J.,Fan, X. H.,et al. The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2[J]. INTERMETALLICS,2009,17(11):920-926. |
APA | Chen, Y. C..,Xu, J..,Fan, X. H..,Zhang, X. F..,Han, L..,...&Uher, C..(2009).The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2.INTERMETALLICS,17(11),920-926. |
MLA | Chen, Y. C.,et al."The mechanism of periodic layer formation during solid-state reaction between Mg and SiO2".INTERMETALLICS 17.11(2009):920-926. |
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