Memory Analysis for Memristors and Memristive Recurrent Neural Networks

doi:10.1109/JAS.2019.1911828

CORC > 自动化研究所 > 中国科学院自动化研究所 > 学术期刊 > IEEE/CAA Journal of Automatica Sinica

	Memory Analysis for Memristors and Memristive Recurrent Neural Networks
	Gang Bao; Yide Zhang; Zhigang Zeng
刊名	IEEE/CAA Journal of Automatica Sinica
	2020
卷号	7 期号:1 页码:96-105
关键词	Dopant drift memory memristive neural networks memristor
ISSN号	2329-9266
DOI	10.1109/JAS.2019.1911828
英文摘要	Traditional recurrent neural networks are composed of capacitors, inductors, resistors, and operational amplifiers. Memristive neural networks are constructed by replacing resistors with memristors. This paper focuses on the memory analysis, i.e. the initial value computation, of memristors. Firstly, we present the memory analysis for a single memristor based on memristors' mathematical models with linear and nonlinear drift. Secondly, we present the memory analysis for two memristors in series and parallel. Thirdly, we point out the difference between traditional neural networks and those that are memristive. Based on the current and voltage relationship of memristors, we use mathematical analysis and SPICE simulations to demonstrate the validity of our methods.
内容类型	期刊论文
源URL	[http://ir.ia.ac.cn/handle/173211/42925]
专题	自动化研究所_学术期刊_IEEE/CAA Journal of Automatica Sinica
推荐引用方式 GB/T 7714	Gang Bao,Yide Zhang,Zhigang Zeng. Memory Analysis for Memristors and Memristive Recurrent Neural Networks[J]. IEEE/CAA Journal of Automatica Sinica,2020,7(1):96-105.
APA	Gang Bao,Yide Zhang,&Zhigang Zeng.(2020).Memory Analysis for Memristors and Memristive Recurrent Neural Networks.IEEE/CAA Journal of Automatica Sinica,7(1),96-105.
MLA	Gang Bao,et al."Memory Analysis for Memristors and Memristive Recurrent Neural Networks".IEEE/CAA Journal of Automatica Sinica 7.1(2020):96-105.