Realizing High-Ranged Out-of-Plane ZTs in N-Type SnSe Crystals through Promoting Continuous Phase Transition

doi:10.1002/aenm.201901334

CORC > 上海应用物理研究所 > 中国科学院上海应用物理研究所 > 中科院上海应用物理研究所2011-2017年

	Realizing High-Ranged Out-of-Plane ZTs in N-Type SnSe Crystals through Promoting Continuous Phase Transition
	Chang, C ; Wang, DY ; He, DS ; He, WK ; Zhu, FY ; Wang, GT ; He, JQ ; Zhao, LD
刊名	ADVANCED ENERGY MATERIALS
	2019
卷号	9 期号:28 页码:-
关键词	THERMOELECTRIC PERFORMANCE ENHANCEMENT EFFICIENCY FIGURE
ISSN号	1614-6832
DOI	10.1002/aenm.201901334
文献子类	期刊论文
英文摘要	Thermoelectric technology enables direct conversion between heat and electricity. The conversion efficiency of a thermoelectric device is determined by the average dimensionless figure of merit ZT(ave). Here, a record high ZT(ave) of approximate to 1.34 in the range of 300-723 K in n-type SnSe based crystals is reported. The remarkable thermoelectric performance derives from the high power factor and the reduced thermal conductivity in the whole temperature range. The high power factor is realized by promoting the continuous phase transition in SnSe crystals through alloying PbSe, which results in a higher symmetry of the crystal structure and the correspondingly modified electronic band structure. Moreover, PbSe alloying induces mass and strain fluctuations, which enables the suppression of thermal transport. These findings provide a new strategy to enhance the thermoelectric performance for the continuous phase transition materials.
语种	英语
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/32179]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位	1.Southern Univ Sci & Technol, Shenzhen Key Lab Thermoelect Mat, Shenzhen 518055, Peoples R China; 2.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201204, Peoples R China; 3.Henan Normal Univ, Coll Phys & Mat Sci, Xinxiang 453007, Henan, Peoples R China 4.Beihang Univ, Sch Mat Sci & Engn, Beijing 100191, Peoples R China; 5.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China;
推荐引用方式 GB/T 7714	Chang, C,Wang, DY,He, DS,et al. Realizing High-Ranged Out-of-Plane ZTs in N-Type SnSe Crystals through Promoting Continuous Phase Transition[J]. ADVANCED ENERGY MATERIALS,2019,9(28):-.
APA	Chang, C.,Wang, DY.,He, DS.,He, WK.,Zhu, FY.,...&Zhao, LD.(2019).Realizing High-Ranged Out-of-Plane ZTs in N-Type SnSe Crystals through Promoting Continuous Phase Transition.ADVANCED ENERGY MATERIALS,9(28),-.
MLA	Chang, C,et al."Realizing High-Ranged Out-of-Plane ZTs in N-Type SnSe Crystals through Promoting Continuous Phase Transition".ADVANCED ENERGY MATERIALS 9.28(2019):-.