In-situ phosphorus-doped polysilicon prepared using rapid-thermal anneal (RTA) and its application for polysilicon passivated-contact solar cells

doi:10.1016/j.solmat.2020.110518

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	In-situ phosphorus-doped polysilicon prepared using rapid-thermal anneal (RTA) and its application for polysilicon passivated-contact solar cells
	Yang, Qing ; Liao, Mingdun ; Wang, Zhixue ; Zheng, Jingming ; Lin, Yiran ; Guo, Xueqi ; Rui, Zhe ; Huang, Dandan ; Lu, Linna ; Feng, Mengmeng
刊名	SOLAR ENERGY MATERIALS AND SOLAR CELLS
	2020
卷号	210
关键词	SILICON DIFFUSION
DOI	10.1016/j.solmat.2020.110518
英文摘要	A rapid thermal anneal (RTA) is used to crystallize the plasma-enhanced chemical vapor deposition (PECVD) deposited hydrogenated amorphous silicon (a-Si:H) thin film to form the phosphorus-doped polysilicon passivated contact in tunnel oxide passivated contact (TOPCon) solar cells. The effects of annealing temperature, annealing time, cooling time, and the polysilicon thickness on the surface passivation are investigated. The primary advantage of the RTA is reducing the whole crystallization period to similar to 15 min, shorter than the conventional tube-furnace annealing period of >60 min. We find that the RTA is a robust method to prepare high-quality polysilicon passivated contact without introducing blistering when the thickness of the a-Si:H is less than 40 nm. The optimized RTA process leads to an implied open-circuit voltage (iV(oc)) of 712 mV and a single-sided dark saturation current density (J(0,s)) of 12.5 fA/cm(2) in the as-annealed state, which is inferior to the surface passivation of the controlled one prepared by a tube furnace annealing. Fortunately, a subsequent Al2O3 capping hydrogenation improves the iV(oc) and J(0,s) to 727 mV and 4.7 fA/cm(2), respectively. The champion conversion efficiency of 23.04% (V-oc = 679.0 mV, J(sc) = 41.97 mA/cm(2) and FF = 80.86%) is achieved, which demonstrates the effectiveness of RTA for preparing a high-efficiency polysilicon passivated-contact solar cell.
学科主题	Energy & Fuels ; Materials Science ; Physics
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/20725]
专题	2020专题
作者单位	1.Zeng, YH 2.Yan, BJ 3.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China.
推荐引用方式 GB/T 7714	Yang, Qing,Liao, Mingdun,Wang, Zhixue,et al. In-situ phosphorus-doped polysilicon prepared using rapid-thermal anneal (RTA) and its application for polysilicon passivated-contact solar cells[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2020,210.
APA	Yang, Qing.,Liao, Mingdun.,Wang, Zhixue.,Zheng, Jingming.,Lin, Yiran.,...&Ye, Jichun.(2020).In-situ phosphorus-doped polysilicon prepared using rapid-thermal anneal (RTA) and its application for polysilicon passivated-contact solar cells.SOLAR ENERGY MATERIALS AND SOLAR CELLS,210.
MLA	Yang, Qing,et al."In-situ phosphorus-doped polysilicon prepared using rapid-thermal anneal (RTA) and its application for polysilicon passivated-contact solar cells".SOLAR ENERGY MATERIALS AND SOLAR CELLS 210(2020).