Achieving high-performance p-type SmMg(2)Bi(2)thermoelectric materials through band engineering and alloying effects

doi:10.1039/c9ta13224d

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2020专题

	Achieving high-performance p-type SmMg(2)Bi(2)thermoelectric materials through band engineering and alloying effects
	Saparamadu, Udara ; Tan, Xiaojian ; Sun, Jifeng ; Ren, Zhensong ; Song, Shaowei ; Singh, David J.; Shuai, Jing ; Jiang, Jun ; Ren, Zhifeng
刊名	JOURNAL OF MATERIALS CHEMISTRY A
	2020
卷号	8 期号:31 页码:15760-15766
关键词	FIGURE-OF-MERIT THERMOELECTRIC PROPERTIES THERMAL-CONDUCTIVITY ZINTL PHASES ENHANCEMENT COMPOUND CAMG2BI2 PBTE
DOI	10.1039/c9ta13224d
英文摘要	Thermoelectric Zintl phases have attracted increasing attention in the past few decades, with good thermoelectric performance observed in many different families. Due to their intrinsic low lattice thermal conductivity, p-type CaAl2Si2(1-2-2)-type Zintl phases, which also exhibit relatively higher electrical transport performance, have been demonstrated to be promising thermoelectric materials for mid- to high-temperature applications. Here we investigate the thermoelectric performance of p-type SmMg2Bi2, a new member of this 1-2-2 Zintl family. Band structure calculations reveal that the calculated band gap of SmMg(2)Bi(2)is smaller in comparison to that of other Bi-based Zintl phases, which inevitably contributes to the bipolar effect clearly observed at higher temperature. Further successful substitution of Eu and Yb is effective in suppressing the bipolar effect and ensures achievement of superior electronic performance, resulting in a peak figure of merit (ZT) of similar to 0.9 at 773 K. The current work has successfully expanded the family of Bi-based p-type 1-2-2 Zintls, and could play an essential role in stimulating further investigation of other Zintl compounds.
学科主题	Chemistry ; Energy & Fuels ; Materials Science
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/20566]
专题	2020专题
作者单位	1.Ren, ZF (corresponding author), Univ Houston, Dept Phys, Houston, TX 77204 USA. 2.Jiang, J (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 3.Ren, ZF (corresponding author), Univ Houston, TcSUH, Houston, TX 77204 USA. 4.Shuai, J (corresponding author), Sun Yat Sen Univ, Sch Mat, Guangzhou 510275, Peoples R China. 5.Shuai, J (corresponding author), Natl Inst Mat Sci NIMS, Ctr Funct Sensor & Actuator CFSN, WPI Int Ctr Mat Nanoarchitechton WPI MANA, Namiki 1-1, Tsukuba, Ibaraki 3050044, Japan.
推荐引用方式 GB/T 7714	Saparamadu, Udara,Tan, Xiaojian,Sun, Jifeng,et al. Achieving high-performance p-type SmMg(2)Bi(2)thermoelectric materials through band engineering and alloying effects[J]. JOURNAL OF MATERIALS CHEMISTRY A,2020,8(31):15760-15766.
APA	Saparamadu, Udara.,Tan, Xiaojian.,Sun, Jifeng.,Ren, Zhensong.,Song, Shaowei.,...&Ren, Zhifeng.(2020).Achieving high-performance p-type SmMg(2)Bi(2)thermoelectric materials through band engineering and alloying effects.JOURNAL OF MATERIALS CHEMISTRY A,8(31),15760-15766.
MLA	Saparamadu, Udara,et al."Achieving high-performance p-type SmMg(2)Bi(2)thermoelectric materials through band engineering and alloying effects".JOURNAL OF MATERIALS CHEMISTRY A 8.31(2020):15760-15766.