All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing

doi:10.1002/adfm.202005582

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2020专题

	All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing
	Hu, Lingxiang ; Yang, Jing ; Wang, Jingrui ; Cheng, Peihong ; Chua, Leon O.; Zhuge, Fei
刊名	ADVANCED FUNCTIONAL MATERIALS
	2020
关键词	AMORPHOUS OXIDE SEMICONDUCTOR RESISTIVE SWITCHING MEMORY ELECTRONIC-STRUCTURE SYNAPSES DEVICE A-INGAZNO4-X NETWORKS
DOI	10.1002/adfm.202005582
英文摘要	Neuromorphic computing (NC) is a new generation of artificial intelligence. Memristors are promising candidates for NC owing to the feasibility of their ultrahigh-density 3D integration and their ultralow energy consumption. Compared to traditional electrical memristors, the emerging optoelectronic memristors are more attractive owing to their ability to combine the advantages of both photonics and electronics. However, the inability to reversibly tune the memconductance with light has severely restricted the development of optoelectronic NC. Here, an all-optically controlled (AOC) analog memristor is realized, with memconductance that is reversibly tunable over a continuous range by varying only the wavelength of the controlling light. The device is based on the relatively mature semiconductor material InGaZnO and a memconductance tuning mechanism of light-induced electron trapping and detrapping. It is found that the light-induced multiple memconductance states are nonvolatile. Furthermore, spike-timing-dependent plasticity learning can be mimicked in this AOC memristor, indicating its potential applications in AOC spiking neural networks for highly efficient optoelectronic NC.
学科主题	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/20336]
专题	2020专题
作者单位	1.Zhuge, F (corresponding author), Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100029, Peoples R China. 2.Zhuge, F (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 3.Zhuge, F (corresponding author), Chinese Acad Sci, Ctr Excellence Brain Sci & Intelligence Technol, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Hu, Lingxiang,Yang, Jing,Wang, Jingrui,et al. All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing[J]. ADVANCED FUNCTIONAL MATERIALS,2020.
APA	Hu, Lingxiang,Yang, Jing,Wang, Jingrui,Cheng, Peihong,Chua, Leon O.,&Zhuge, Fei.(2020).All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing.ADVANCED FUNCTIONAL MATERIALS.
MLA	Hu, Lingxiang,et al."All-Optically Controlled Memristor for Optoelectronic Neuromorphic Computing".ADVANCED FUNCTIONAL MATERIALS (2020).