Stretchable and Twistable Resistive Switching Memory with Information Storage and Computing Functionalities

doi:10.1002/admt.202000810

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2020专题

	Stretchable and Twistable Resistive Switching Memory with Information Storage and Computing Functionalities
	Lu, Ying ; Gao, Shuang ; Li, Fali ; Zhou, Youlin ; Xie, Zhuolin ; Yang, Huali ; Xue, Wuhong ; Hu, Benlin ; Zhu, Xiaojian ; Shang, Jie
刊名	ADVANCED MATERIALS TECHNOLOGIES
	2020
关键词	ELECTRONICS SKIN
DOI	10.1002/admt.202000810
英文摘要	High-performance stretchable and twistable nonvolatile memory devices with logic-in-memory functionality are highly desired for the development of future wearable electronics such as smart clothing. However, it is challenging to fabricate these memory devices using rigid functional materials based on conventional film deposition and patterning techniques. Herein, the first intrinsically stretchable and twistable resistive switching memory is reported using spin-coated poly(dimethyl siloxane) elastomer as the storage medium and printed liquid metal as the electrodes. The memory device is found to exhibit a reliable resistive switching behavior under up to 30% stretching strain and 90 degrees torsional deformation, possessing a large memory window (approximate to 10(2)) and an excellent retention (>10(4) s). Under 30% strain, stretching-release endurance of >500 cycles as well as excellent data integrity during the dynamic stretching-release process is demonstrated. Beyond data storage, logic-in-memory computation prototype represented by a one-bit full adder is successfully implemented within four operation steps based on three stretched memory cells. This work will be highly valuable in materials and structure design towards the development of high-performance and multifunctional wearable electronic modules and systems.
学科主题	Materials Science
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/20335]
专题	2020专题
作者单位	1.Li, RW (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Peoples R China. 2.Gao, S 3.Li, RW (corresponding author), Chinese Acad Sci, CAS Key Lab Magnet Mat & Devices, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China.
推荐引用方式 GB/T 7714	Lu, Ying,Gao, Shuang,Li, Fali,et al. Stretchable and Twistable Resistive Switching Memory with Information Storage and Computing Functionalities[J]. ADVANCED MATERIALS TECHNOLOGIES,2020.
APA	Lu, Ying.,Gao, Shuang.,Li, Fali.,Zhou, Youlin.,Xie, Zhuolin.,...&Li, Run-Wei.(2020).Stretchable and Twistable Resistive Switching Memory with Information Storage and Computing Functionalities.ADVANCED MATERIALS TECHNOLOGIES.
MLA	Lu, Ying,et al."Stretchable and Twistable Resistive Switching Memory with Information Storage and Computing Functionalities".ADVANCED MATERIALS TECHNOLOGIES (2020).