Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness

doi:10.2147/IJN.S267536

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2020专题

	Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness
	Dai, Chaoqi ; Huo, Changhe ; Qi, Shaocheng ; Dai, Mingzhi ; Webster, Thomas ; Xiao, Han
刊名	INTERNATIONAL JOURNAL OF NANOMEDICINE
	2020
卷号	15 页码:8037-8043
关键词	LONG-TERM POTENTIATION PLASTICITY MEMORY
DOI	10.2147/IJN.S267536
英文摘要	Background: Artificial synaptic behaviors are necessary to investigate and implement since they are considered to be a new computing mechanism for the analysis of complex brain information. However, flexible and transparent artificial synapse devices based on thin-film transistors (TFTs) still need further research. Purpose: To study the application of flexible and transparent thin-film transistors with nanometer thickness on artificial synapses. Materials and Methods: Here, we report the design and fabrication of flexible and transparent artificial synapse devices based on TFTs with polyethylene terephthalate (PET) as the flexible substrate, indium tin oxide (ITO) as the gate and a polyvinyl alcohol (PVA) grid insulating layer as the gate insulation layer at room temperature. Results: The charge and discharge of the carriers in the flexible and transparent thin-film transistors with nanometer thickness can be used for artificial synaptic behavior. Conclusion: In summary, flexible and transparent thin-film transistors with nanometer thickness can be used as pressure and temperature sensors. Besides, inherent charge transfer characteristics of indium gallium zinc oxide semiconductors have been employed to study the biological synapse-like behaviors, including synaptic plasticity, excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), and long-term memory (LTM). More precisely, the spike rate plasticity (SRDP), one representative synaptic plasticity, has been demonstrated. Such TFTs are interesting for building future neuromorphic systems and provide a possibility to act as fundamental blocks for neuromorphic system applications.
学科主题	Science & Technology - Other Topics ; Pharmacology & Pharmacy
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/20246]
专题	2020专题
作者单位	1.Dai, MZ (corresponding author), Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China. 2.Webster, T (corresponding author), Northeastern Univ, Dept Chem Engn, Boston, MA 02115 USA.
推荐引用方式 GB/T 7714	Dai, Chaoqi,Huo, Changhe,Qi, Shaocheng,et al. Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness[J]. INTERNATIONAL JOURNAL OF NANOMEDICINE,2020,15:8037-8043.
APA	Dai, Chaoqi,Huo, Changhe,Qi, Shaocheng,Dai, Mingzhi,Webster, Thomas,&Xiao, Han.(2020).Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness.INTERNATIONAL JOURNAL OF NANOMEDICINE,15,8037-8043.
MLA	Dai, Chaoqi,et al."Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness".INTERNATIONAL JOURNAL OF NANOMEDICINE 15(2020):8037-8043.