Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact

doi:10.1016/j.solmat.2019.110389

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2020专题

	Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact
	Huang, Yuqing ; Liao, Mingdun ; Wang, Zhixue ; Guo, Xueqi ; Jiang, Chunsheng ; Yang, Qing ; Yuan, Zhizhong ; Huang, Dandan ; Yang, Jie ; Zhang, Xinyu
刊名	SOLAR ENERGY MATERIALS AND SOLAR CELLS
	2020
卷号	208
关键词	SOLAR-CELLS POLO-JUNCTIONS SI PHOSPHORUS THICKNESS LAYERS
DOI	10.1016/j.solmat.2019.110389
英文摘要	We develop a plasma-assisted nitrous-oxide (N2O) gas oxidation (PANO) method to prepare the ultrathin silicon oxide (SiOx ) for polysilicon (poly-Si) passivated contact. The effects of preparation conditions, including the substrate temperature, processing time, and plasma power, are studied. Afterwards, we integrate the PANO SiOx into the polysilicon passivated contact and optimize the passivation and contact performances. Excellent surface passivation with the n-type poly-Si and PANO SiOx on the n-type c-Si wafer is achieved by 880 degrees C annealing, which shows competitive passivation quality to the one with NASO SiOx. Champion implied open-circuit voltage (iV(oc)) and single-sided recombination saturated current (J(0)) reach 730 mV and 4.3 fA/cm(2) after crystallization; and they are further improved to 747 mV and 2.0 fA/cm(2) (3 x 10(15)cm(-3)) after subsequent AlOx/SiNx hydrogenation. Using transmission electron microscopy (TEM), we find that the thickness of PANO SiOx ranges 1.1-2.4 nm and the controlled nitric acid oxidized SiOx (NAOS) ranges 1.3-1.8 nm. The contact resistivity (rho(c)) is typically <10 m Omega cm(2) with the annealing temperature of >820 degrees C. Also, the crystallinity, phosphorous indiffusion profile, and current-leaking density of the passivated contacts are investigated. In general, the PANO SiOx and in-situ doping amorphous silicon precursor can be fabricated in one PECVD system without additional equipment or transfer procedures, which is favorable for the high-efficiency, low-cost industrial manufacture.
学科主题	Energy & Fuels ; Materials Science ; Physics
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/19742]
专题	2020专题
作者单位	1.Yan, BJ 2.Zeng, YH 3.Ye, JC (corresponding author), Chinese Acad Sci, Ningbo Mat Inst Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Yuqing,Liao, Mingdun,Wang, Zhixue,et al. Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact[J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS,2020,208.
APA	Huang, Yuqing.,Liao, Mingdun.,Wang, Zhixue.,Guo, Xueqi.,Jiang, Chunsheng.,...&Ye, Jichun.(2020).Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact.SOLAR ENERGY MATERIALS AND SOLAR CELLS,208.
MLA	Huang, Yuqing,et al."Ultrathin silicon oxide prepared by in-line plasma-assisted N2O oxidation (PANO) and the application for n-type polysilicon passivated contact".SOLAR ENERGY MATERIALS AND SOLAR CELLS 208(2020).