Spectroscopic ellipsometry study of In2O3 thin films

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	Spectroscopic ellipsometry study of In2O3 thin films
	Miao, L.1,3; Tanemura, S.1; Cao, Y. G.2; Xu, G.3
刊名	journal of materials science-materials in electronics
	2009
卷号	20 期号:suppl. 1 页码:71-75
关键词	OPTICAL-PROPERTIES ANATASE GROWTH
ISSN号	0957-4522
通讯作者	tanemura-sakae@jfcc.or.jp
中文摘要	in2o3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 ev. aside from one amorphous sample prepared at room substrate temperature, polycrystalline in2o3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 a degrees c. excellent se fittings were realized by applying 1 and/or 2 terms f&b amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on bruggeman effective medium approximation for thinner films. spectral dependent refractive indices and extinction coefficients were obtained for five samples. the curve shapes were well interpreted according to the applied dispersion formulas. almost similar optical band gap values from 3.76 to 3.84 ev were obtained for five samples by tauc plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode.
英文摘要	in2o3 films grown by helicon magnetron sputtering with different thicknesses were characterized by spectroscopic ellipsometry in the energy range from 1.5 to 5.0 ev. aside from one amorphous sample prepared at room substrate temperature, polycrystalline in2o3 films with cubic crystal structure were confirmed for other four samples prepared at the substrate temperature of 450 a degrees c. excellent se fittings were realized by applying 1 and/or 2 terms f&b amorphous formulations, building double layered film configuration models, and further taking account of void into the surface layer based on bruggeman effective medium approximation for thinner films. spectral dependent refractive indices and extinction coefficients were obtained for five samples. the curve shapes were well interpreted according to the applied dispersion formulas. almost similar optical band gap values from 3.76 to 3.84 ev were obtained for five samples by tauc plot calculation using extinction coefficients under the assumption of direct allowed optical transition mode.
WOS标题词	science & technology ; technology ; physical sciences
类目[WOS]	engineering, electrical & electronic ; materials science, multidisciplinary ; physics, applied ; physics, condensed matter
研究领域[WOS]	engineering ; materials science ; physics
关键词[WOS]	optical-properties ; anatase ; growth
收录类别	SCI ; ISTP
原文出处	http://www.springerlink.com/content/0957-4522/
语种	英语
WOS记录号	WOS:000262106900016
公开日期	2010-09-16
内容类型	期刊论文
源URL	[http://ir.giec.ac.cn/handle/344007/3374]
专题	中国科学院广州能源研究所
作者单位	1.JFCC, Mat R&D Lab, Atsuta Ku, Nagoya, Aichi 4568587, Japan 2.Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Peoples R China 3.Chinese Acad Sci, Guangzhou Inst Energy Convers, Guangzhou 510640, Guangdong, Peoples R China
推荐引用方式 GB/T 7714	Miao, L.,Tanemura, S.,Cao, Y. G.,et al. Spectroscopic ellipsometry study of In2O3 thin films[J]. journal of materials science-materials in electronics,2009,20(suppl. 1):71-75.
APA	Miao, L.,Tanemura, S.,Cao, Y. G.,&Xu, G..(2009).Spectroscopic ellipsometry study of In2O3 thin films.journal of materials science-materials in electronics,20(suppl. 1),71-75.
MLA	Miao, L.,et al."Spectroscopic ellipsometry study of In2O3 thin films".journal of materials science-materials in electronics 20.suppl. 1(2009):71-75.