QQ客服 官方微博 反馈留言

	Semiconductor devices on misoriented substrates
	CANEAU CATHERINE G; NISHIYAMA NOBUHIKO; GURYANOV GEORGIY
	2006-10-05
著作权人	CORNING INCORPORATED
专利号	WO2006058040A3
国家	世界知识产权组织
文献子类	发明申请
其他题名	Semiconductor devices on misoriented substrates
英文摘要	A semiconductor device (100) includes a misoriented substrate (240) having a surface area inclined in a range of about 8 to 40 degrees from the {100} plane. At least one highly doped P-type semiconductor layer (106) of a first semiconductor material doped with Carbon (C) is grown over the surface area. At least one highly doped N-type semiconductor layer (104) of a second semiconductor material is grown over the surface area and near the at least one highly doped P-type semiconductor layer (106). A moderately doped P-type layer (60) is grown over the surface area, wherein the moderately doped P-type layer 60 has a third semiconductor material doped with a dopant selected as a member from the group consisting of Zn, Be, Cd and Mg. The devices 100 include VCSELs having tunnel junctions (110) and semiconductor DBRs (230) composed of AlGaInAs/InP or GaInAs/InP layers (2308/2302) on misoriented substrates 240.
公开日期	2006-10-05
申请日期	2005-11-21
状态	未确认
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/91690]
专题	半导体激光器专利数据库
作者单位	CORNING INCORPORATED
推荐引用方式 GB/T 7714	CANEAU CATHERINE G,NISHIYAMA NOBUHIKO,GURYANOV GEORGIY. Semiconductor devices on misoriented substrates. WO2006058040A3. 2006-10-05.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。