QQ客服 官方微博 反馈留言

	Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
	JOHNSON, RALPH H.
	2005-06-16
著作权人	FINISAR CORPORATION
专利号	US20050129078A1
国家	美国
文献子类	发明申请
其他题名	Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
英文摘要	Multi-component barrier layers include formation of a GaAs layer and at least one adjacent GaAsN layer. The resulting multi-component barrier layer shape can provide enhanced (extended) offset for capture of holes and enhanced electrons. Other benefits include: a small amount of strain compensation; poorer spatial overlap of higher confined states reducing parasitics at high bias, with some small effect on the lowest confined states. Quantum wells and associated barriers layers can be grown with combinations of gallium, (Ga), arsenic, (As), nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., with wavelengths over 1200 nm. Layers of strained quantum well material can also be supported by mechanical stabilizers.
公开日期	2005-06-16
申请日期	2004-10-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/91558]
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	JOHNSON, RALPH H.. Multicomponent barrier layers in quantum well active regions to enhance confinement and speed. US20050129078A1. 2005-06-16.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。