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	Iii-v lasers with on-chip integration
	ELLIS-MONAGHAN, JOHN J.; VENTRONE, SEBASTIAN; JAIN, VIBHOR; NGU, YVES
	2019-02-28
著作权人	GLOBALFOUNDRIES INC.
专利号	US20190067905A1
国家	美国
文献子类	发明申请
其他题名	Iii-v lasers with on-chip integration
英文摘要	Structures for integrated lasers, systems including integrated lasers, and associated fabrication methods. A ring waveguide and a seed region are arranged interior of the ring waveguide. A laser strip extends across a portion of the ring waveguide. The laser strip has an end contacting the seed region and another opposing end. The laser strip includes a laser medium and a p-n junction capable of generating electromagnetic radiation. The p-n junction of the laser strip is aligned with a portion of the ring waveguide.
公开日期	2019-02-28
申请日期	2017-08-31
状态	申请中
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89909]
专题	半导体激光器专利数据库
作者单位	GLOBALFOUNDRIES INC.
推荐引用方式 GB/T 7714	ELLIS-MONAGHAN, JOHN J.,VENTRONE, SEBASTIAN,JAIN, VIBHOR,et al. Iii-v lasers with on-chip integration. US20190067905A1. 2019-02-28.

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