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	Preparation of doubleehetero junction laser element
	MATSUMOTO YOSHINARI
	1980-01-11
著作权人	NIPPON ELECTRIC CO
专利号	JP1980003663A
国家	日本
文献子类	发明申请
其他题名	Preparation of doubleehetero junction laser element
英文摘要	PURPOSE:To uniformalize the injection of currents to a diffusion stripe portion of an active layer, by concentration compensating the stripe portion by n type impurities beforehand doped by beforehand making the concentration of the n type impurities of the first layer not more than specified concentration. CONSTITUTION:A n type layer 2, which concentration is not more than 1X 10cm, an active layer 3 and a layer 4, which forbidden band width is wider than the active layer, are successively grown on a substrate 1 in epitaxial shapes. Ranges except a stripe portion are covered with SiO2, etc. on a surface of the layer 4, a body produced by forming Zn or Cd on these ranges in a filmy shape is used as a diffusion source, enclosed in an ampul and closed, and Zn or Cd is diffused at 500-700 deg.C. This diffusion is controlled so that a diffusion range 6 reach up to the active layer 3 or surpass the layer and reach up to the layer 2 and a shape of the diffusion range formed on the layer 2 be n-shaped. Thus, the desired low concentration is obtained in the diffusion concentration of the layer 2, and currents can uniformly be injected to the stripe portion 6 of the active layer 3.
公开日期	1980-01-11
申请日期	1978-06-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89885]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	MATSUMOTO YOSHINARI. Preparation of doubleehetero junction laser element. JP1980003663A. 1980-01-11.

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