Preparation of doubleehetero junction laser element | |
MATSUMOTO YOSHINARI | |
1980-01-11 | |
著作权人 | NIPPON ELECTRIC CO |
专利号 | JP1980003663A |
国家 | 日本 |
文献子类 | 发明申请 |
其他题名 | Preparation of doubleehetero junction laser element |
英文摘要 | PURPOSE:To uniformalize the injection of currents to a diffusion stripe portion of an active layer, by concentration compensating the stripe portion by n type impurities beforehand doped by beforehand making the concentration of the n type impurities of the first layer not more than specified concentration. CONSTITUTION:A n type layer 2, which concentration is not more than 1X 10cm, an active layer 3 and a layer 4, which forbidden band width is wider than the active layer, are successively grown on a substrate 1 in epitaxial shapes. Ranges except a stripe portion are covered with SiO2, etc. on a surface of the layer 4, a body produced by forming Zn or Cd on these ranges in a filmy shape is used as a diffusion source, enclosed in an ampul and closed, and Zn or Cd is diffused at 500-700 deg.C. This diffusion is controlled so that a diffusion range 6 reach up to the active layer 3 or surpass the layer and reach up to the layer 2 and a shape of the diffusion range formed on the layer 2 be n-shaped. Thus, the desired low concentration is obtained in the diffusion concentration of the layer 2, and currents can uniformly be injected to the stripe portion 6 of the active layer 3. |
公开日期 | 1980-01-11 |
申请日期 | 1978-06-22 |
状态 | 失效 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/89885] ![]() |
专题 | 半导体激光器专利数据库 |
作者单位 | NIPPON ELECTRIC CO |
推荐引用方式 GB/T 7714 | MATSUMOTO YOSHINARI. Preparation of doubleehetero junction laser element. JP1980003663A. 1980-01-11. |
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