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	Manufacture of semiconductor light emitting element
	MATSUO NOZOMI; KAWAGUCHI MASAZUMI
	1989-01-11
著作权人	古河電気工業株式会社
专利号	JP1989007589A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor light emitting element
英文摘要	PURPOSE:To make it possible to control a diffusion front so that it is in a high degree of uniformity in its depth by forming an epitaxial film by an MOCVD technique, thereby forming an impurity diffusion region with a selective solid phase diffusion technique. CONSTITUTION:Laminated epitaxial layers are manufactured with an MOCVD (organometallic chemical vapor deposition) technique, that is, a vapor epitaxial growth technique which is performed according to the thermal decomposition reaction of II or III organic compounds and V or IV hydrogen compounds. Further, a doped oxide film 10 including diffused impurities is formed on an epitaxial and a stripe-like impurity diffusion region 7' is formed with a selective solid phase diffusion technique which performs heat treatment. Since a thermal treatment temperature in the case of diffusion can be suppressed at a low level, impurity distribution in crystals does not change during their thermal treatment and there is little or no change in the configuration of carrier concentration profile at a diffusion front. In this way, a high degree of uniformity in diffusion is attained.
公开日期	1989-01-11
申请日期	1987-06-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89784]
专题	半导体激光器专利数据库
作者单位	古河電気工業株式会社
推荐引用方式 GB/T 7714	MATSUO NOZOMI,KAWAGUCHI MASAZUMI. Manufacture of semiconductor light emitting element. JP1989007589A. 1989-01-11.

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