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	Semiconductor laser
	MINAGAWA SHIGEKAZU; KONDO MASAHIKO; TANAKA TOSHIAKI; OISHI AKIO; SAITO KATSUTOSHI
	1990-07-16
著作权人	HITACHI LTD
专利号	JP1990181985A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To sharply improve the continuous oscillation temperature of a semiconductor laser by forming a double heterostructure body consisting of a mixed crystal of AlGaInP on a p-type GaAs substrate in the order of a p-type light guide layer, active layer, and n-type light guide layer and, it the same time, a current constriction means so as to limit the current area injected into the n-type light guide layer. CONSTITUTION:A p-GaInP layer 32, p-AlGaInP layer 33, GaInP active layer 34, n-AlGaInP layer 35, n-GaAs surface protective layer 36 are successively grown epitaxially on a p-type GaAs 100 substrate crystal 3 After forming the layers 32-36, a photoresist layer 37 (6mum in width and 4mum in thickness) is formed on the wafer and boron ions 38 are implanted under an acceleration voltage of 250KeV in an implanting density of 1X10 pieces/cm. After implantation, the layer 37 is removed and an n-GaAs layer 40 is further formed on the protective layer 36, so as to obtain a wafer for gain waveguide type semiconductor laser containing an electric current blocking layer 39 insulated by the ion implantation.
公开日期	1990-07-16
申请日期	1989-01-09
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89694]
专题	半导体激光器专利数据库
作者单位	HITACHI LTD
推荐引用方式 GB/T 7714	MINAGAWA SHIGEKAZU,KONDO MASAHIKO,TANAKA TOSHIAKI,et al. Semiconductor laser. JP1990181985A. 1990-07-16.

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