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	Optical waveguide integrated semiconductor laser
	IWANO HIDEAKI
	1989-11-20
著作权人	SEIKO EPSON CORP
专利号	JP1989287981A
国家	日本
文献子类	发明申请
其他题名	Optical waveguide integrated semiconductor laser
英文摘要	PURPOSE:To continuously and arbitrarily control the diameter of the spot of a semiconductor laser under a current control by introducing a laser light emitted from the active layer region of the laser to an optical waveguide region, and mounting a plurality of injecting electrodes for injecting a current to the region. CONSTITUTION:A first clad layer 204 having the same conductivity type as that of a single crystalline compound semiconductor substrate 202, an active layer 205 having a band gap Eg smaller than that of the layer 204, and a second clad layer 206 having a band gap Eg larger than that of the layer 205 and different conductivity type from that of the layer 204 are formed on the substrate 202. A semiconductor optical guide layer region having Eg larger than that of the active layer region of a semiconductor laser is formed on one resonator end face of the laser, and one or a plurality of stripelike current injecting regions are formed in the same direction as that of the optical resonator direction on the layer region. Thus, the diameter of the spot of the laser can be condensed to an arbitrary size under a current value control.
公开日期	1989-11-20
申请日期	1988-01-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89622]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	IWANO HIDEAKI. Optical waveguide integrated semiconductor laser. JP1989287981A. 1989-11-20.

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