| Light emitting diode | |
| KUO, DANIEL; HSU, SAMUEL | |
| 2003-02-04 | |
| 著作权人 | EPISTAR CORPORATION |
| 专利号 | US6515306 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Light emitting diode |
| 英文摘要 | A light emitting diode with strained layer superlatices (SLS) crystal structure is formed on a substrate. A nucleation layer and a buffer layer are sequentially formed on the substrate, so as to ease the crystal growth for the subsequent crystal growing process. An active layer is covered between an upper and a lower cladding layers. The active later include III-N group compound semiconductive material. A SLS contact layer is located on the upper cladding layer. A transparent electrode is located on the contact later to serve as an anode. Another electrode layer has contact with the buffer layer, and is separated from the lower and upper cladding layers. |
| 公开日期 | 2003-02-04 |
| 申请日期 | 2001-08-27 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89542]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | EPISTAR CORPORATION |
| 推荐引用方式 GB/T 7714 | KUO, DANIEL,HSU, SAMUEL. Light emitting diode. US6515306. 2003-02-04. |
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