| Semiconductor Laser | |
| JOHN, HAIG, MARSH; CRAIG, JAMES, HAMILTON; OLEK, PETER, KOWALSKI | |
| 2002-06-05 | |
| 著作权人 | INTENSE INCORPORATED |
| 专利号 | GB2369725A |
| 国家 | 英国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor Laser |
| 英文摘要 | A semiconductor laser device (10) including at least one portion which has been Quantum Well Intermixed (QWI) and means for providing gain profiling within an active portion of the device (10). Preferably, the device (10) provides a Wide Optical Waveguide (WOW). The device (10) may be grown by Metal Organic Vapour Phase Epitaxy (MOVPE). Non-Absorbing Mirrors (NAM) may be formed in the device. A method of fabricating the device may include using Impurity Induced Disordering or Impurity Free Vacancy Disordering (IFVD). |
| 公开日期 | 2002-06-05 |
| 申请日期 | 2001-07-27 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/89486]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | INTENSE INCORPORATED |
| 推荐引用方式 GB/T 7714 | JOHN, HAIG, MARSH,CRAIG, JAMES, HAMILTON,OLEK, PETER, KOWALSKI. Semiconductor Laser. GB2369725A. 2002-06-05. |
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