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	Semiconductor laser device
	KITAMURA, TOMOYUKI
	2004-03-11
著作权人	SONY CORPORATION
专利号	US20040047379A1
国家	美国
文献子类	发明申请
其他题名	Semiconductor laser device
英文摘要	A broad area semiconductor laser device having an NFP with top hat shaped profiles for the P wave and the S wave, which result from polarized beam splitting of the emitted light, is provided. The broad area semiconductor laser device of the present invention has the same structure as the broad area semiconductor laser device of the prior art, except that the composition of an etch stop layer is different. The semiconductor laser device includes an n-Al0.5Ga0.5As first clad layer; an active layer including an AlGaAs optical guide layer and an AlGaAs quantum well layer; a 0.3 mum thick p-Al0.5Ga0.5As lower second clad layer; an Al0.7Ga0.3As etch stop layer; a p-Al0.5Ga0.5As upper second clad layer; and a p-GaAs contact layer, which form a laminated structure on top of an n-GaAs substrate.
公开日期	2004-03-11
申请日期	2003-05-28
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89478]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	KITAMURA, TOMOYUKI. Semiconductor laser device. US20040047379A1. 2004-03-11.

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