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	MITO IKUO
	1993-02-03
著作权人	NIPPON ELECTRIC CO
专利号	JP1993008875B2
国家	日本
文献子类	授权发明
其他题名	-
英文摘要	PURPOSE:To obtain a semiconductor laser, in which the characteristics of vapor growth are utilized and production cost of which can be reduced, by laminating a clad layer, an active layer and a clad layer on a multilayer film substrate in which a buffer layer, a current confinement layer and a cut-off layer are laminated on a semiconductor substrate, an impurity is diffused in a striped manner and a shallow groove is shaped to a diffusion section. CONSTITUTION:A first conductivity type clad layer 6, an active layer 7 and a second conductivity type clad layer 8 are laminated on a multilayer film substrate in which a first conductivity type buffer layer 2, a second conductivity type current confinement layer 3 and a cut-off layer 4 in low impurity concentration are laminated on a first conductivity type semiconductor substrate 1, first conductivity type impurity diffusion 20 in depth reaching the buffer layer 2 is executed in a striped manner and a shallow groove 30 is shaped to said diffusion section 20. The buffer layer 2 such as a p-type InP buffer layer 2, the current confinement layer 3 such as an n-type InP current confinement layer 3, the cut-off layer 4 such as a non-doped InP cut-off layer 4 and a non-doped InGaAsP cap layer 5 are laminated on the substrate 1 such as a p-type InP substrate 1 in succession. The impurity diffusion 20 such as a p-type Zn diffusion region 20 is shaped, the groove 30 is formed on the surface of the region 20, and the clad layer 6 such as a p-type InP cla layer 6, the active layer 7 such as a non-doped InGaAsP active layer 7 and the clad layer 8 such as an n-type InP clad layer 8 are laminated.
公开日期	1993-02-03
申请日期	1986-05-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89370]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO
推荐引用方式 GB/T 7714	MITO IKUO. -. JP1993008875B2. 1993-02-03.

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