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	Surface-emission semiconductor laser device
	YOKOUCHI, NORIYUKI; IWAI, NORIHIRO
	2008-10-16
著作权人	THE FURUKAWA ELECTRIC CO., LTD.
专利号	US20080254566A1
国家	美国
文献子类	发明申请
其他题名	Surface-emission semiconductor laser device
英文摘要	A surface-emitting semiconductor laser device includes a semi-insulating substrate, a layer structure with a bottom multilayer reflector, an n-type cladding layer, an active layer structure for emitting laser, a p-type cladding layer and a top multilayer reflector with a dielectric material, consecutively formed on the semi-insulating substrate, the active layer structure, the p-type cladding layer and the top multilayer reflector, configuring a mesa post formed on a portion of the n-type cladding layer, the p-type cladding layer or the p-type multilayer reflector. The surface-emitting semiconductor laser includes a p-side electrode formed on another portion of the p-type cladding layer, and an n-side electrode formed on another portion of the n-type cladding layer. The n-side electrode includes a substantially uniform Au film and AuGeNi film or AuGe film consecutively formed on the n-type cladding layer, and an alloy is formed between said Au film and said AuGeNi film or AuGe film.
公开日期	2008-10-16
申请日期	2008-04-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89348]
专题	半导体激光器专利数据库
作者单位	THE FURUKAWA ELECTRIC CO., LTD.
推荐引用方式 GB/T 7714	YOKOUCHI, NORIYUKI,IWAI, NORIHIRO. Surface-emission semiconductor laser device. US20080254566A1. 2008-10-16.

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