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	Formation of quantum fine wire
	KODAMA KUNIHIKO
	1990-06-22
著作权人	FUJITSU LTD
专利号	JP1990162717A
国家	日本
文献子类	发明申请
其他题名	Formation of quantum fine wire
英文摘要	PURPOSE:To form the arrangement of a quantum fine wire, having the width of several atomic layers in the same thickness as the stepping of crystal face, in a highly precise manner by a method wherein a quantum well semiconductor layer, which is epitaxially grown, is formed by controlling its thickness and width smaller than the de Broglie wavelength. CONSTITUTION:The crystal face of a substrate is formed into a face (111)B which is inclined in orientation . As a result, the substrate surface is turned to the face (111)B having a stepping periodically. The side face constituting the stepping is a face (110). In the first atomic layer epitaxy, a semiconductor layer having a wide forbidden band width, which becomes the barrier of quantum well, is deposited. As it is an isotropic qrawing method, the stepping on the substrate crystal surface is in the state as it is. When a semiconductor, which becomes a confinement layer, is coated thereon using an anisotropic crystal growth method, no crystal growth progresses on the face (111)B, and crystal growth progresses only on the face (110) of the stepped part. As a result, a confinement layer, having the controlled atomic column number in lateral direction, is formed in the thickness same as the stepping. In the subsequently conducted atomic layer epitaxy, the barrier layer of a quantum well is formed enveloping the formed carrier confinement layer, and a quantum fine line is formed.
公开日期	1990-06-22
申请日期	1988-12-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89335]
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	KODAMA KUNIHIKO. Formation of quantum fine wire. JP1990162717A. 1990-06-22.

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