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	Optical waveguide integration type semiconductor laser
	IWANO HIDEAKI
	1987-09-28
著作权人	SEIKO EPSON CORP
专利号	JP1987219991A
国家	日本
文献子类	发明申请
其他题名	Optical waveguide integration type semiconductor laser
英文摘要	PURPOSE:To enable an astigmatic difference to be electrically variable by injection current to an optical waveguide by providing a stripe-like current bottleneck structure in the same direction as that of the emission of a semiconductor laser on the optical waveguide and separating the injection electrode of the semiconductor laser and the injection electrode to the wave directing path from each other. CONSTITUTION:After a buffer layer 105 and a clad layer 106 are sequentially laminated on a substrate 104, an active layer 114 and an optical waveguide layer 107 both containing aluminium of different quantities from each other are formed by photochemical vapor growth by one growth process. The optical waveguide layer 107 contains more aluminium than the active layer 14 and therefore has a larger band gap than the active layer 114. Thereafter, a clad layer 108, a gap layer 109 and a current blocking layer 110 are formed. The blocking layer 110 is stripe-wise etched perpendicularly to the end face of a resonator. The active layer width of a semiconductor laser and the waveguide region width of the optical waveguide are made the same as each other. Furthermore, an optical waveguide current injection electrode 111 and an active layer current injection electrode 114 are formed in separation. Optical waveguide injection current 112 and active layer injection current 114 are independently controllable of each other.
公开日期	1987-09-28
申请日期	1986-03-20
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89334]
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORP
推荐引用方式 GB/T 7714	IWANO HIDEAKI. Optical waveguide integration type semiconductor laser. JP1987219991A. 1987-09-28.

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