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	Semiconductor laser
	OKANO EMIKO
	1992-12-09
著作权人	NEC CORP
专利号	JP1992355987A
国家	日本
文献子类	发明申请
其他题名	Semiconductor laser
英文摘要	PURPOSE:To enable a semiconductor laser to be stabilized in lateral mode and enhanced in output power by a method wherein an undoped clad layer is not formed on all the surface of an element but formed in stripe excluding the vicinity of the end face of the element. CONSTITUTION:An N-type (Al0.5Ga0.4)0.5In0.5P clad layer 2, a Ga0.5In0.5P active layer 3, and an undoped (Al0.6Ga0.4)In0.5P0.5 clad layer 4 are made to grow on a GaAs substrate 1, and the undoped clad layer 4 is selectively removed as wide as 30mum from both sides by etching. In succession, a Zn-doped P clad layer 5, etching stop layers 5 and 6, and a N-type GaAs current blocking layer 7 are grown, a stripe groove is provided for the constriction of current, and a GaAs cap layer 8 is made to grow thereon as buried. As an undoped clad layer is located adjacent to the end face, dopant contained in the clad layer is diffused into the active layer in this region. By this setup, a semiconductor laser of this design can be lessened in light intensity near its edge and protected against optical damage caused by high output.
公开日期	1992-12-09
申请日期	1991-02-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89262]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	OKANO EMIKO. Semiconductor laser. JP1992355987A. 1992-12-09.

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