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	Surface-emitting type semiconductor laser device
	IGA KENICHI; FURUSAWA KOTARO; IBARAKI AKIRA; ISHIKAWA TORU
	1991-12-13
著作权人	科学技術振興事業団
专利号	JP1991283480A
国家	日本
文献子类	发明申请
其他题名	Surface-emitting type semiconductor laser device
英文摘要	PURPOSE:To sharply improve a semiconductor laser of this design in heat dissipating property by a method wherein a heat diffusion layer is interposed between an active region of a semiconductor multilayer film and a GaAs substrate. CONSTITUTION:An area light emitting type semiconductor laser device is assembled in a structure of so-called junction-up type where a heat sink is provided under an electrode 13, a voltage is applied between electrodes 12 and 13 in this state to enable an active region 5 to emit light, resonance is made to start between a reflecting mirror 3 of semiconductor multilayered film and a reflecting mirror 10 of dielectric multilayered film, and a laser beam is emitted as shown by an arrow. Heat released from the active region 5 is conducted to an AlAs heat diffusion layer 2 through the reflecting mirror 3, diffused by the layer 2, conducted to a GaAs substrate 1, and dissipated through a heat sink. Heat of the active region 5 is released only from a prism whose diameter is D.
公开日期	1991-12-13
申请日期	1990-03-29
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89234]
专题	半导体激光器专利数据库
作者单位	科学技術振興事業団
推荐引用方式 GB/T 7714	IGA KENICHI,FURUSAWA KOTARO,IBARAKI AKIRA,et al. Surface-emitting type semiconductor laser device. JP1991283480A. 1991-12-13.

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