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	Wavelength variable semiconductor laser
	YAMAZAKI HIROYUKI
	1992-04-07
著作权人	NEC CORP
专利号	JP1992105386A
国家	日本
文献子类	发明申请
其他题名	Wavelength variable semiconductor laser
英文摘要	PURPOSE:To make it possible to enable the title laser to perform a wide-range wave length variable operation as the laser maintains flat FM modulation characteristics by a method wherein a multilayer structure is formed into the form of a mesa, a second conductivity type semiconductor contact layer is formed on parts, which come into contact with a second conductivity type semiconductor layer, of the structure, an electrode on a first conductivity type semiconductor layer is divided into a plurality in the longitudinal direction of a mesa stripe and a diffraction grating is formed adjoining a tuning layer or an active layer. CONSTITUTION:A diffraction grating is formed on the surface of a P-type (100) InP substrate 1, an InGaAsP tuning layer 2, an n-type InP semiconductor layer 3, an InGaAsP active layer 4 and a p-type InP clad layer 5 are grown in order and a multilayer structure consisting of the layers 2, 3, 4 and 5 is formed into the form of a mesa using an SiO2 film formed in the orientation as a mask. The faces (011) vertical to the surface are respectively formed on the side surfaces of the mesa. Subsequently, an n-type InP layer 3 is grown with a mesa stripe on both sides of the layer 3, the SiO2 film used as the mask is removed using a hydrofluoric acid, an SiO2 film 7 is again deposited and thereafter, a patterning is performed to form p electrodes 8 and an n electrode 10 and a p electrode 11 is formed on the rear of the substrate.
公开日期	1992-04-07
申请日期	1990-08-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89219]
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	YAMAZAKI HIROYUKI. Wavelength variable semiconductor laser. JP1992105386A. 1992-04-07.

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