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	Manufacture of semiconductor laser
	KINOSHITA JIYUNICHI
	1985-07-19
著作权人	TOSHIBA KK
专利号	JP1985136281A
国家	日本
文献子类	发明申请
其他题名	Manufacture of semiconductor laser
英文摘要	PURPOSE:To realize the structure of refractive index waveguide and the structure of current stricture with good reproducibility at the same time at a time of crystal growing process by a method wherein a stripe groove is provided on a substrate, and the substrate is processed by removing both sides in preservation of the groove section in such a manner that a groove is formed at the top of the mesa stripe. CONSTITUTION:A V-groove 11 is formed on the N type (100) InP substrate 1 by mask etching. Next, the mesa stripe 12 is formed so that the groove 11 may be positioned at the top of the mesa by the mask etching where the groove 11 has been protected. The isolation formation of an active layer and the formation of a current stricture layer are accomplished in this substrate at the same time at a time of growth. Then, a P-InP clad layer 4 is grown out of a fused liquid having a high oversaturation degree. Growing an N-InP current block layer 7 out of a fused liquid having a low oversaturation degree enables the side surface of the mesa to be buried so as to flatten the surface without growth at the top of the layer 4, resulting in the realization of the structure of current stricture produced by reverse junction. Finally, the growing surface is completely flattened, and the second P-InP clad layer 4' and a P GaInAsP ohmic contact layer 8 are grown in order to facilitate later electrode process and the like.
公开日期	1985-07-19
申请日期	1983-12-26
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/89204]
专题	半导体激光器专利数据库
作者单位	TOSHIBA KK
推荐引用方式 GB/T 7714	KINOSHITA JIYUNICHI. Manufacture of semiconductor laser. JP1985136281A. 1985-07-19.

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